IDT74FCT543AT/CT/DT
FAST CMOS OCTAL LATCHED TRANSCEIVER
INDUSTRIAL TEMPERATURE RANGE
FAST CMOS
OCTAL LATCHED
TRANSCEIVER
IDT74FCT543AT/CT/DT
FEATURES:
DESCRIPTION:
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The FCT543T is a non-inverting octal transceiver built using an advanced
dual metal CMOS technology. This device contains two sets of eight D-type
latches with separate input and output controls for each set. For data flow
from A to B, for example, the A-to-B Enable (CEAB) input must be low in order
to enter data from A0–A7 or to take data from B0–B7, as indicated in the
Function Table. With CEAB low, a low signal on the A-to-B Latch Enable
(LEAB) input makes the A-to-B latches transparent; a subsequent low-tohigh transition of the LEAB signal puts the A latches in the storage mode and
their outputs no longer change with the A inputs. With CEAB and OEAB both
low, the 3-state B output buffers are active and reflect the data present at the
output of the A latches. Control of data from B to A is similar, but uses the
CEBA, LEBA and OEBA inputs.
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A, C, and D grades
Low input and output leakage ≤1µA (max.)
CMOS power levels
True TTL input and output compatibility:
– VOH = 3.3V (typ.)
– VOL = 0.3V (typ.)
High Drive outputs (-15mA IOH, 64mA IOL)
Meets or exceeds JEDEC standard 18 specifications
Power off disable outputs permit "live insertion"
Available in SOIC and QSOP packages
FUNCTIONAL BLOCK DIAGRAM
DETAIL A
D
Q
B0
LE
Q
A0
D
LE
A1
B1
A2
B2
A3
A4
B3
DETAIL A x 7
B4
A5
B5
A6
B6
A7
B7
OEBA
OEAB
CEBA
LEBA
CEAB
LEAB
The IDT logo is a registered trademark of Integrated Device Technology, Inc.
INDUSTRIAL TEMPERATURE RANGE
© 2006 Integrated Device Technology, Inc.
OCTOBER 2008
DSC-5489/6
IDT74FCT543AT/CT/DT
FAST CMOS OCTAL LATCHED TRANSCEIVER
INDUSTRIAL TEMPERATURE RANGE
FUNCTION TABLE(1, 2)
For A-to-B (Symmetric with B-to-A)
CEAB
H
X
X
L
L
Inputs
LEAB
X
H
X
L
H
OEAB
X
X
H
L
L
Latch
Status
A-to-B
Storing
Storing
X
Transparent
Storing
Output
Buffers
B0–B7
High Z
X
High Z
Current A Inputs
Previous* A Inputs
NOTES:
1. * Before LEAB LOW-to-HIGH Transition
H = HIGH Voltage Level
L = LOW Voltage Level
X = Don’t Care
2. A-to-B data flow shown; B-to-A flow control is the same, except using CEBA, LEBA
and OEBA.
DC ELECTRICAL CHARACTERISTICS OVER OPERATING RANGE
Following Conditions Apply Unless Otherwise Specified:
Industrial: TA = –40°C to +85°C, VCC = 5.0V ±5%
Symbol
Test Conditions(1)
Parameter
Min.
Typ.(2)
Max.
Unit
VIH
Input HIGH Level
Guaranteed Logic HIGH Level
2
—
—
V
VIL
Input LOW Level
Guaranteed Logic LOW Level
—
—
0.8
V
IIH
Input HIGH Current(4)
VCC = Max.
VI = 2.7V
—
—
±1
µA
IIL
Input LOW Current(4)
VCC = Max.
VI = 0.5V
—
—
±1
µA
IOZH
High Impedance Output Current
VCC = Max
VO = 2.7V
—
—
±1
µA
IOZL
(3-State output pins)(4)
VO = 0.5V
—
—
±1
II
VIK
VH
Input HIGH Current(4)
Clamp Diode Voltage
Input Hysteresis
VCC = Max., VI = VCC (Max.)
VCC = Min, IIN = -18mA
—
—
—
—
–0.7
200
±1
–1.2
—
µA
V
mV
ICC
Quiescent Power Supply Current
VCC = Max., VIN = GND or VCC
—
0.01
1
mA
Min.
2.4
Typ.(2)
3.3
Max.
—
Unit
V
—
OUTPUT DRIVE CHARACTERISTICS
Symbol
VOH
Parameter
Output HIGH Voltage
VCC = Min
Test Conditions(1)
IOH = –8mA
VIN = VIH or VIL
IOH = –15mA
2
3
—
IOL = 64mA
—
0.3
0.55
V
–60
–120
–225
mA
—
—
±1
µA
VOL
Output LOW Voltage
IOS
Short Circuit Current
VCC = Min
VIN = VIH or VIL
VCC = Max., VO = GND(3)
IOFF
Input/Output Power Off Leakage(5)
VCC = 0V, VIN or VO ≤ 4.5V
NOTES:
1. For conditions shown as Min. or Max., use appropriate value specified under Electrical Characteristics for the applicable device type.
2. Typical values are at VCC = 5.0V, +25°C ambient.
3. Not more than one output should be tested at one time. Duration of the test should not exceed one second.
4. The test limit for this parameter is ±5µA at TA = –55°C.
5. This parameter is guaranteed but not tested.
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