RefTitle1
PD84008L-E
RF power transistor, LdmoST plastic family
N-channel enhancement-mode lateral MOSFETs
Features
■
Excellent thermal stability
■
Common source configuration
■
POUT = 8 W with 13 dB gain @ 870 MHz / 7.5 V
■
Plastic package
■
ESD protection
■
In compliance with the 2002/95/EC european
directive
PowerFLATTM (5 mm x 5 mm)
Description
The PD84008L-E is a common source N-channel,
enhancement-mode lateral Field-Effect RF power
transistor. It is designed for high gain, broadband
commercial and industrial applications. It
operates at 7.5 V in common source mode at
frequencies of up to 1 GHz. PD84008L-E boasts
the excellent gain, linearity and reliability of ST’s
latest LDMOS technology mounted in leadless
SMD plastic RF power package, PowerFLAT™.
Table 1.
Figure 1.
Pin connection
Device summary
Order code
Marking
Package
Packing
PD84008L-E
84008
PowerFLATTM
Tape and reel
February 2011
Doc ID 14228 Rev 3
1/14
www.st.com
14