FINAL
Am27C040
4 Megabit (512 K x 8-Bit) CMOS EPROM
DISTINCTIVE CHARACTERISTICS
s Fast access time
s Single +5 V power supply
— Available in speed options as fast as 90 ns
s Low power consumption
s ±10% power supply tolerance standard
— <10 µA typical CMOS standby current
s JEDEC-approved pinout
— Plug-in upgrade for 1 Mbit and 2 Mbit EPROMs
— Easy upgrade from 28-pin JEDEC EPROMs
s 100% Flashrite™ programming
— Typical programming time of 1 minute
s Latch-up protected to 100 mA from –1 V to
VCC + 1 V
s High noise immunity
s Compact 32-pin DIP, PDIP, PLCC packages
GENERAL DESCRIPTION
The Am27C040 is a 4 Mbit ultraviolet erasable programmable read-only memory. It is organized as 512K
bytes, operates from a single +5 V supply, has a static
standby mode, and features fast single address location programming. The device is available in windowed
ceramic DIP packages and plastic one-time programmable (OTP) packages.
Data can be typically accessed in less than 90 ns, allowing high-performance microprocessors to operate
without any WAIT states. The device offers separate
Output Enable (OE#) and Chip Enable (CE#) controls,
thus eliminating bus contention in a multiple bus microprocessor system.
AMD’s CMOS process technology provides high
speed, low power, and high noise immunity. Typical
power consumption is only 100 mW in active mode,
and 50 µW in standby mode.
All signals are TTL levels, including programming signals. Bit locations may be programmed singly, in
blocks, or at random. The device supports AMD’s
Flashrite programming algorithm (100 µs pulses) resulting in typical programming time of 1 minute.
BLOCK DIAGRAM
VCC
VSS
VPP
Data Outputs
DQ0–DQ7
CE#/PGM#
A0–A18
Address
Inputs
Output Enable
Chip Enable
and
Prog Logic
Output
Buffers
Y
Decoder
OE#
Y
Gating
X
Decoder
4,194,304-Bit
Cell Matrix
14971H-1
Publication# 14971 Rev: H Amendment/0
Issue Date: August 25, 1999
