1 Mbit SPI Serial Flash
SST25VF010
SST25VF0101Mb Serial Peripheral Interface (SPI) flash memory
Data Sheet
FEATURES:
• Single 2.7-3.6V Read and Write Operations
• Serial Interface Architecture
– SPI Compatible: Mode 0 and Mode 3
• 20 MHz Max Clock Frequency
• Superior Reliability
– Endurance: 100,000 Cycles (typical)
– Greater than 100 years Data Retention
• Low Power Consumption:
– Active Read Current: 7 mA (typical)
– Standby Current: 8 µA (typical)
• Flexible Erase Capability
– Uniform 4 KByte sectors
– Uniform 32 KByte overlay blocks
• Fast Erase and Byte-Program:
– Chip-Erase Time: 70 ms (typical)
– Sector- or Block-Erase Time: 18 ms (typical)
– Byte-Program Time: 14 µs (typical)
• Auto Address Increment (AAI) Programming
– Decrease total chip programming time over
Byte-Program operations
• End-of-Write Detection
– Software Status
• Hold Pin (HOLD#)
– Suspends a serial sequence to the memory
without deselecting the device
• Write Protection (WP#)
– Enables/Disables the Lock-Down function of the
status register
• Software Write Protection
– Write protection through Block-Protection bits in
status register
• Packages Available
– 8-lead SOIC (4.9mm x 6mm)
– 8-contact WSON
• All non-Pb (lead-free) devices are RoHS compliant
PRODUCT DESCRIPTION
SST’s serial flash family features a four-wire, SPI-compatible interface that allows for a low pin-count package
occupying less board space and ultimately lowering total
system costs. SST25VF010 SPI serial flash memory is
manufactured with SST’s proprietary, high performance
CMOS SuperFlash Technology. The split-gate cell design
and thick-oxide tunneling injector attain better reliability
and manufacturability compared with alternate
approaches.
The SST25VF010 device significantly improves performance, while lowering power consumption. The total
energy consumed is a function of the applied voltage,
©2005 Silicon Storage Technology, Inc.
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current, and time of application. Since for any given voltage range, the SuperFlash technology uses less current
to program and has a shorter erase time, the total energy
consumed during any Erase or Program operation is less
than alternative flash memory technologies. The
SST25VF010 device operates with a single 2.7-3.6V
power supply.
The SST25VF010 device is offered in both 8-lead SOIC
and 8-contact WSON packages. See Figure 1 for the pin
assignments.
The SST logo and SuperFlash are registered trademarks of Silicon Storage Technology, Inc.
These specifications are subject to change without notice.
