FINAL
Am29F040
4 Megabit (524,288 x 8-Bit) CMOS 5.0 Volt-only,
Sector Erase Flash Memory
DISTINCTIVE CHARACTERISTICS
s 5.0 V ± 10% for read and write operations
— Minimizes system level power requirements
s Compatible with JEDEC-standards
— Pinout and software compatible with singlepower-supply Flash
— Superior inadvertent write protection
s Package options
— 32-pin PLCC
— 32-pin TSOP
— 32-pin PDIP
s Minimum 100,000 write/erase cycles guaranteed
s High performance
— 55 ns maximum access time
s Sector erase architecture
— Uniform sectors of 64 Kbytes each
— Any combination of sectors can be erased.
Also supports full chip erase.
s Sector protection
— Hardware method that disables any combination
of sectors from write or erase operations
s Embedded Erase Algorithms
— Automatically preprograms and erases the chip
or any combination of sectors
s Embedded Program Algorithms
— Automatically programs and verifies data at
specified address
s Data Polling and Toggle Bit feature for detection
of program or erase cycle completion
s Erase suspend/resume
— Supports reading data from a sector not being
erased
s Low power consumption
— 20 mA typical active read current
— 30 mA typical program/erase current
s Enhanced power management for standby
mode
— <1 µA typical standby current
— Standard access time from standby mode
GENERAL DESCRIPTION
The Am29F040 is a 4 Mbit, 5.0 Volt-only Flash memory
organized as 512 Kbytes of 8 bits each. The Am29F040
is offered in a 32-pin package. This device is designed
to be programmed in-system with the standard system
5.0 V V CC supply. A 12.0 V V PP is not required for
write or erase operations. The device can also be
reprogrammed in standard EPROM programmers.
The standard Am29F040 offers access times between
55 ns and 150 ns, allowing operation of high-speed
microprocessors without wait states. To eliminate bus
contention the device has separate chip enable (CE),
write enable (WE) and output enable (OE) controls.
The Am29F040 is entirely command set compatible
with the JEDEC single-power-supply Flash standard.
Commands are written to the command register using
standard microprocessor write timings. Register contents serve as input to an internal state machine
which controls the erase and programming circuitry.
Write cycles also internally latch addresses and data
needed for the programming and erase operations.
Reading data out of the device is similar to reading
from 12.0 Volt Flash or EPROM devices.
The Am29F040 is programmed by executing the program command sequence. This will invoke the Embedded Program Algorithm which is an internal algorithm
that automatically times the program pulse widths and
verifies proper cell margin. Typically, each sector can
be programmed and verified in less than one second.
Erase is accomplished by executing the erase command sequence. This will invoke the Embedded Erase
Algorithm which is an internal algorithm that automatically preprograms the array if it is not already programmed before executing the erase operation. During
erase, the device automatically times the erase pulse
widths and verifies proper cell margin.
Publication# 17113 Rev: E Amendment/0
Issue Date: November 1996
