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AN28F010-120
A28F010 1024K (128K x 8) CMOS FLASH MEMORY (Automotive) Y Automotive Temperature Range b 40 C to a 125 C Y Quick-Pulse Programming Algorithm 10 ms Typical Byte-Program 2 Second Chip-Program Y 1 000 Erase Program Cycles Minimum over Automotive Temperature Range Integrated Program Erase Stop Timer Y Command Register Architecture for Microprocessor Microcontroller Compatible Write Interface Y Noise Immunity Features g 10% VCC Tolerance Maximum Latch-Up Immunity through EPI Processing Y ETOX TM III Flash Nonvolatile Memory Technology EPROM-Compatible Process Base High-Volume Manufacturing Experience Y JEDEC-Standard Pinouts 32-Pin Plastic DIP 32-Lead PLCC Flash Memory Electrical Chip-Erase 1 Second Typical Chip-Erase Y Y Y 12 0V g 5% VPP Y High-Performance Read 120 ns Maximum Access Time Y CMOS Low Power Consumption 30 mA Maximum Active Current 300 mA Maximum Standby Current (See Packaging Spec Order 231369) Intel’s 28F010 CMOS flash memory offers the most cost-effective and reliable alternative for read write random access nonvolatile memory The 28F010 adds electrical chip-erasure and reprogramming to familiar EPROM technology Memory contents can be rewritten in a test socket in a PROM-programmer socket onboard during subassembly test in-system during final test and in-system after-sale The 28F010 increases memory flexibility while contributing to time- and cost-savings The 28F010 is a 1024-kilobit nonvolatile memory organized as 131 072 bytes of 8 bits Intel’s 28F010 is offered in 32-pin Plastic DIP or 32-lead PLCC packages Pin assignments conform to JEDEC standards Extended erase and program cycling capability is designed into Intel’s ETOX TM III (EPROM Tunnel Oxide) process technology Advanced oxide processing an optimized tunneling structure and lower electric field combine to extend reliable cycling beyond that of traditional EEPROMs With the 12 0V VPP supply the 28F010 performs a minimum of 1 000 erase and program cycles well within the time limits of the Quick-Pulse Programming and Quick-Erase algorithms Intel’s 28F010 employs advanced CMOS circuitry for systems requiring high-performance access speeds low power consumption and immunity to noise Its 120 nanosecond access time provides no-WAIT-state performance for a wide range of microprocessors and microcontrollers Maximum standby current of 300 mA translates into power savings when the device is deselected Finally the highest degree of latch-up protection is achieved through Intel’s unique EPI processing Prevention of latch-up is provided for stresses up to 100 mA on address and data pins from b 1V to VCC a 1V With Intel’s ETOX III process base the 28F010 leverages years of EPROM experience to yield the highest levels of quality reliability and cost-effectiveness In order to meet the rigorous environmental requirements of automotive applications Intel offers the 28F010 in extended automotive temperature range Read and write characteristics are guaranteed over the range of b 40 C to a 125 C ambient Other brands and names are the property of their respective owners Information in this document is provided in connection with Intel products Intel assumes no liability whatsoever including infringement of any patent or copyright for sale and use of Intel products except as provided in Intel’s Terms and Conditions of Sale for such products Intel retains the right to make changes to these specifications at any time without notice Microcomputer Products may have minor variations to this specification known as errata COPYRIGHT INTEL CORPORATION 1995 November 1995 Order Number 290266-004
INTEL
Intel Corporation
U.S.A
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