AT-31011, AT-31033
Low Current, High Performance
NPN Silicon Bipolar Transistor
Data Sheet
Description
Features
Avago’s AT-31011 and AT-31033 are high performance
NPN bipolar transistors that have been optimized for
operation at low voltages, making them ideal for use in
battery powered applications in wireless markets. The
AT-31033 uses the 3 lead SOT-23, while the AT-31011
places the same die in the higher performance 4 lead
SOT-143. Both packages are industry standards
compatible with high volume surface mount assembly
techniques.
• High Performance Bipolar Transistor Optimized for Low
Current, Low Voltage Operation
• 900 MHz Performance:
AT-31011: 0.9 dB NF, 13 dB GA
AT-31033: 0.9 dB NF, 11 dB GA
• Characterized for End-Of-Life Battery Use (2.7 V)
• SOT-143 SMT Plastic Package
• Tape-And-Reel Packaging Option Available
• Lead-free Option Available
The 3.2 micron emitter-to-emitter pitch and reduced
parasitic design of these transistors yields extremely
high performance products that can perform a multiplicity of tasks. The 10 emitter finger interdigitated
geometry yields an extremely fast transistor with low
operating currents and reasonable impedances.
Optimized performance at 2.7 V makes these devices
ideal for use in 900 MHz, 1.9 GHz, and 2.4 GHz battery
operated systems as an LNA, gain stage, buffer, oscillator, or active mixer. Applications include cellular and
PCS handsets as well as Industrial-Scientific-Medical
systems. Typical amplifier designs at 900 MHz yield
1.3 dB noise figures with 11 dB or more associated gain
at a 2.7 V, 1 mA bias. Moderate output power capability
(+9 dBm P1dB) coupled with an excellent noise figure
yields high dynamic range for a microcurrent device.
High gain capability at 1 V, 1 mA makes these devices a
good fit for 900 MHz pager applications.
Outline Drawing
EMITTER COLLECTOR
310
BASE
COLLECTOR
310
BASE
The AT-3 series bipolar transistors are fabricated using
an optimized version of Avago’s 10 GHz fT, 30 GHz fmax
Self-Aligned-Transistor (SAT) process. The die are
nitride passivated for surface protection. Excellent
device uniformity, performance and reliability are
produced by the use of ion-implantation, self-alignment
techniques, and gold metalization in the fabrication of
these devices.
EMITTER
SOT-143 (AT-31011)
EMITTER
SOT-23 (AT-31033)
