Philips Semiconductors
Product specification
Thyristors
GENERAL DESCRIPTION
Passivated thyristors in a plastic
envelope, suitable for surface
mounting, intended for use in
applications
requiring
high
bidirectional
blocking
voltage
capability and high thermal cycling
performance. Typical applications
include motor control, industrial and
domestic lighting, heating and static
switching.
PINNING - SOT404
PIN
BT151B series
QUICK REFERENCE DATA
SYMBOL
PARAMETER
BT151BRepetitive peak off-state
voltages
Average on-state current
RMS on-state current
Non-repetitive peak on-state
current
VDRM,
VRRM
IT(AV)
IT(RMS)
ITSM
MAX. MAX. MAX. UNIT
500R
500
650R
650
800R
800
V
7.5
12
100
7.5
12
100
7.5
12
100
A
A
A
PIN CONFIGURATION
SYMBOL
DESCRIPTION
mb
1
cathode
2
anode
3
gate
mb
a
k
2
anode
1
g
3
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
IT(AV)
IT(RMS)
ITSM
I2t
dIT/dt
IGM
VGM
VRGM
PGM
PG(AV)
Tstg
Tj
Average on-state current
RMS on-state current
Non-repetitive peak
on-state current
half sine wave; Tmb ≤ 109 ˚C
all conduction angles
half sine wave; Tj = 25 ˚C prior to
surge
t = 10 ms
t = 8.3 ms
t = 10 ms
ITM = 20 A; IG = 50 mA;
dIG/dt = 50 mA/µs
I2t for fusing
Repetitive rate of rise of
on-state current after
triggering
Peak gate current
Peak gate voltage
Peak reverse gate voltage
Peak gate power
Average gate power
over any 20 ms period
Storage temperature
Operating junction
temperature
UNIT
-
VDRM, VRRM Repetitive peak off-state
voltages
MAX.
-500R -650R -800R
5001
6501
800
V
-
7.5
12
A
A
-
100
110
50
50
A
A
A2s
A/µs
-40
-
2
5
5
5
0.5
150
125
A
V
V
W
W
˚C
˚C
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the thyristor may
switch to the on-state. The rate of rise of current should not exceed 15 A/µs.
June 1999
1
Rev 1.200
