GaAs Varactor Diodes
Abrupt Junction
®
TM
MV20001 – MV21010
Features
●
High Q Values for Higher Frequency Performance
●
Constant Gamma Design
●
Low Reverse Current
●
Available as Chip or Packaged Diodes
●
Available in Chip-on-Board Packaging
●
Custom Designs Available
Applications
●
VCOs
●
Phase-Locked Oscillators
Description
●
High Q Tunable Filters
●
Phase Shifters
●
Pre-Selectors
Microsemi’s GaAs abrupt junction varactors are
fabricated from epitaxial layers grown at
Microsemi using Chemical Vapor Deposition. The
layers are processed using proprietary techniques
resulting in a high Q factor and very repeatable
tuning curves. The diodes are available in a variety
of microwave ceramic packages or chips for
operation from UHF to millimeter wave
frequencies.
Maximum Ratings
Reverse Voltage
Breakdown Voltage
Forward Current
50 mA @ 25°C
Incident Power
+20 dBm @ 25°C
Operating Temperature
-55°C to +175°C
Storage Temperature
-55°C to +200°C
IMPORTANT: For the most current data, consult our website: www.MICROSEMI.com
Specifications are subject to change. Consult factory for the latest information.
1
The MV20000 Series of products are
supplied with a RoHS complaint Gold finish
.
These devices are ESD sensitive and must be handled using ESD precautions.
Copyright 2008
Rev: 2009-05-11
Microsemi
Microwave Products
75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748
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