CMPT3904 CMPT3904G*
CMPT3906 CMPT3906G*
NPN
PNP
w w w. c e n t r a l s e m i . c o m
SURFACE MOUNT
COMPLEMENTARY
SILICON TRANSISTORS
SOT-23 CASE
DESCRIPTION:
These CENTRAL SEMICONDUCTOR devices are
complementary silicon transistors manufactured by the
epitaxial planar process, epoxy molded in a surface
mount package, designed for small signal general
purpose amplifier and switching applications.
MARKING CODES: CMPT3904:
CMPT3906:
CMPT3904G*:
CMPT3906G*:
C1A
C2A
CG1
CG2
* Device is Halogen Free by design
MAXIMUM RATINGS: (TA=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
SYMBOL
VCBO
VCEO
CMPT3904
CMPT3906
CMPT3904G* CMPT3906G*
60
40
40
VEBO
IC
Continuous Collector Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
ELECTRICAL CHARACTERISTICS: (TA=25°C)
SYMBOL
TEST CONDITIONS
ICEV
VCE=30V, VEB=3.0V
IBL
VCE=30V, VEB=3.0V
BVCBO
IC=10μA
40
6.0
UNITS
V
V
5.0
V
200
PD
TJ, Tstg
ΘJA
mA
350
°C
357
CMPT3904
CMPT3904G*
MIN
MAX
50
mW
-65 to +150
°C/W
CMPT3906
CMPT3906G*
MIN
MAX
50
UNITS
nA
-
50
-
50
nA
60
-
40
-
V
-
40
-
V
BVCEO
IC=1.0mA
40
BVEBO
IE=10μA
6.0
-
5.0
-
V
VCE(SAT)
IC=10mA, IB=1.0mA
IC=50mA, IB=5.0mA
-
0.20
-
0.25
V
-
0.30
-
0.40
V
IC=10mA, IB=1.0mA
IC=50mA, IB=5.0mA
0.65
0.85
0.65
0.85
V
V
VCE(SAT)
VBE(SAT)
VBE(SAT)
-
0.95
-
0.95
IC=0.1mA
40
-
60
-
70
-
80
-
100
300
100
300
hFE
IC=1.0mA
VCE=1.0V, IC=10mA
VCE=1.0V, IC=50mA
60
-
60
-
hFE
VCE=1.0V, IC=100mA
30
-
30
-
hFE
hFE
hFE
VCE=1.0V,
VCE=1.0V,
R7 (1-February 2010)
