KM416C256D, KM416V256D
CMOS DRAM
256K x 16Bit CMOS Dynamic RAM with Fast Page Mode
DESCRIPTION
This is a family of 262,144 x 16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells
within the same row. Power supply voltage (+5.0V or +3.3V), access time (-5,-6,-7), power consumption(Normal or Low power) and
package type(SOJ or TSOP-II) are optional features of this family. All of this family have CAS-before-RAS refresh, RAS-only refresh and
Hidden refresh capabilities. Furthermore, Self-refresh operation is available in L-version. This 256Kx16 fast page mode DRAM family is
fabricated using Samsung′s advanced CMOS process to realize high band-width, low power consumption and high reliability.
It may be used as graphic memory unit for microcomputer, personal computer and portable machines.
• Fast Page Mode operation
FEATURES
• 2 CAS Byte/Wrod Read/Write operation
• Part Identification
• CAS-before-RAS refresh capability
• RAS-only and Hidden refresh capability
- KM416C256D/DL (5V, 512 Ref.)
- KM416V256D/DL (3.3V, 512 Ref.)
• Self-refresh capability (L-ver only)
• TTL(5V)/LVTTL(3.3V) compatible inputs and outputs
• Early Write or output enable controlled write
• Active Power Dissipation
• JEDEC Standard pinout
Unit : mW
• Available in 40-pin SOJ 400mil and44(40)-pin
Speed
3.3V(512 Ref.)
5V(512 Ref.)
-5
-
605
• Triple +5V±10% power supply(5V product)
-6
325
495
• Triple +3.3V±0.3V power supply(3.3V product)
-7
290
440
TSOP(II) 400mil packages
• Refresh Cycles
VCC
C256D
5V
V256D
FUNCTIONAL BLOCK DIAGRAM
Refresh
cycle
Refresh period
Normal
L-ver
512
8ms
128ms
3.3V
RAS
UCAS
LCAS
W
Control
Clocks
Refresh Timer
• Performance Range
Speed
tRAC
tCAC
tRC
tPC
Remark
-5
50ns
15ns
90ns
35ns
5V only
-6
60ns
15ns
10ns
40ns
5V/3.3V
-7
70ns
20ns
130ns
45ns
5V/3.3V
Memory Array
262,144 x16
Cells
Row Address Buffer
A0~A8
Col. Address Buffer
Lower
Data in
Buffer
Row Decoder
Refresh Control
Refresh Counter
Vcc
Vss
VBB Generator
Column Decoder
SAMSUNG ELECTRONICS CO., LTD. reserves the right to
change products and specifications without notice.
Sense Amps & I/O
Part
NO.
Lower
Data out
Buffer
Upper
Data in
Buffer
Upper
Data out
Buffer
DQ0
to
DQ7
OE
DQ8
to
DQ15
