3 Volt Intel StrataFlash® Memory
28F128J3, 28F640J3, 28F320J3 (x8/x16)
Datasheet
Product Features
s
s
s
Performance
— 110/120/150 ns Initial Access Speed for
32/64/128 Mbit Densities
— 25 ns Asynchronous Page-Mode Reads
— 32-Byte Write Buffer
—6.8 µs per Byte Effective
Programming Time
Software
— Program and Erase suspend support
— Flash Data Integrator (FDI), Common
Flash Interface (CFI) Compatible
Security
— 128-bit Protection Register
—64-bit Unique Device Identifier
—64-bit User Programmable OTP Cells
— Absolute Protection with VPEN = GND
— Individual Block Locking
— Block Erase/Program Lockout during
Power Transitions
s
s
s
Architecture
— Multi-Level Cell Technology: High
Density at Low Cost
— High-Density Symmetrical 128-Kbyte
Blocks
—128 Mbit (128 Blocks)
—64 Mbit (64 Blocks)
—32 Mbit (32 Blocks)
Quality and Reliability
— Operating Temperature:
-40 °C to +85 °C
— 100K Minimum Erase Cycles per Block
— 0.18 µm ETOX™ VII Process (J3C)
— 0.25 µm ETOX™ VI Process (J3A)
Packaging and Voltage
— 56-Lead TSOP Package
— 64-Ball Intel® Easy BGA Package
— 48-Ball Intel® VF BGA Package (32 and
64 Mbit) (x16 only)
— VCC = 2.7 V – 3.6 V
— VCCQ = 2.7 V – 3.6 V
Capitalizing on Intel’s 0.25 and 0.18 micron, two-bit-per-cell technology, 3 Volt Intel StrataFlash® Memory
products provide 2X the bits in 1X the space, with new features for mainstream performance. Offered in 128Mbit (16-Mbyte), 64-Mbit, and 32-Mbit densities, these devices bring reliable, two-bit-per-cell storage
technology to the flash market segment.
Benefits include: more density in less space, high-speed interface, lowest cost-per-bit NOR devices, support for
code and data storage, and easy migration to future devices.
Using the same NOR-based ETOX™ technology as Intel’s one-bit-per-cell products, Intel StrataFlash memory
devices take advantage of over one billion units of Flash manufacturing experience since 1987. As a result, Intel
StrataFlash components are ideal for code and data applications where high density and low cost are required.
Examples include networking, telecommunications, digital set top boxes, audio recording, and digital imaging.
By applying FlashFile™ memory family pinouts, Intel StrataFlash memory components allow easy design
migrations from existing Word-Wide FlashFile memory (28F160S3 and 28F320S3), and first generation Intel
StrataFlash memory (28F640J5 and 28F320J5) devices.
Intel StrataFlash memory components deliver a new generation of forward-compatible software support. By
using the Common Flash Interface (CFI) and the Scalable Command Set (SCS), customers can take advantage
of density upgrades and optimized write capabilities of future Intel StrataFlash memory devices. Manufactured
on Intel® 0.18 micron ETOX™ VII (J3C) and 0.25 micron ETOX™ VI (J3A) process technology, Intel
StrataFlash memory provides the highest levels of quality and reliability.
Notice: This document contains information on new products in production. The specifications are
subject to change without notice. Verify with your local Intel sales office that you have the latest
datasheet before finalizing a design.
Order Number: 290667-012
December 2002
