SSY5829P
-2.5 A, -20 V, RDS(ON) 0.110
P-Channel Enhancement MOSFET
With Schottky Diode
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
1206-8CF
The miniature surface mount MOSFETs utilize a
high cell density trench process to provide low
RDS(on) and to ensure minimal power loss and
heat dissipation. Typical applications are DC-DC
converters and power management in portable and
battery-powered products such as computers,
printers,PCMCIA cards, cellular and cordless telephones.
FEATURES
Low RDS(on) provides higher efficiency and
extends battery life.
Low thermal impedance copper leadframe
1206-8CF saves board space.
Fast switching speed.
High performance trench technology.
REF.
A
B
C
D
E
F
PACKAGE INFORMATION
Package
MPQ
LeaderSize
1206-8CF
3K
7’ inch
Millimeter
Min.
Max.
2.00
2.10
3.00
3.05
3.00
3.05
0.65
0.70
1.95
2.00
0.70
0.90
REF.
M
a
b
L
L1
C
C
D
A
A
Millimeter
Min.
Max.
0.08
0.25
1.70
1.73
0.24
0.35
0.20
0.40
0
0.1
D
S
G
MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
Parameter
Symbol
Ratings
Unit
VDS
VKA
VGS
-20
20
±8
-2.5
-1.9
-10
-1.6
0.5
8
2.1
1.1
1.3
0.68
-55 ~ 150
V
V
V
Drain-Source Voltage (MOSFET)
Reverse Voltage (Schottky)
Gate-Source Voltage (MOSFET)
Continuous Drain Current(TJ=150°C )(MOSFET) 1
TA=25°C
TA=70°C
Pulsed Drain Current (MOSFET) 2
Continuous Source Current (MOSFET Diode Conduction) 1
Average Forward Current (Schottky)
Pulse Forward Current (Schottky)
TA=25°C
Maximum Power Dissipation (MOSFET)1
TA=70°C
TA=25°C
Maximum Power Dissipation (Schottky)1
TA=70°C
Operating Junction and Storage Temperature Range
ID
IDM
IS
IF
IFM
PD
TJ, TSTG
A
A
A
A
A
W
°C
Thermal Resistance Ratings
Maximum Junction to Ambient 1
t≦5 sec
Steady State
RθJA
50
90
60
110
°C/W
Notes:
1.
Surface Mounted on 1” x 1” FR4 Board.
2.
Pulse width limited by maximum junction temperature.
http://www.SeCoSGmbH.com/
14-Jan-2011 Rev. B
Any changes of specification will not be informed individually.
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