1SS389
TOSHIBA Diode
Silicon Epitaxial Schottky Barrier Type
1SS389
High Speed Switching Application
Unit: mm
Small package
Low forward voltage: VF = 0.23V (typ.) @IF = 5mA
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
VRM
15
V
Reverse voltage
VR
10
V
Maximum (peak) forward current
IFM
200
mA
Average forward current
IO
100
mA
IFSM
1
A
Power dissipation
P*
150
mW
Junction temperature
Tj
125
°C
Storage temperature range
Tstg
−55∼125
°C
Operating temperature range
Topr
−40∼100
°C
Maximum (peak) reverse Voltage
Surge current (10ms)
JEDEC
―
JEITA
―
TOSHIBA
1-1G1A
Weight: 1.4mg (typ.)
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
*:
Mounted on a glass epoxy circuit board of 20 × 20mm,
pad dimension of 4 × 4mm.
Electrical Characteristics (Ta = 25°C)
Symbol
Test
Circuit
VF (1)
Characteristic
―
VF (2)
Min
Typ.
Max
IF = 1mA
―
0.18
―
―
IF = 5mA
―
0.23
0.30
VF (3)
―
IF = 100mA
―
0.35
0.50
Reverse current
IR
―
VR = 10V
―
―
20
μA
Total capacitance
CT
―
VR = 0, f = 1MHz
―
20
40
pF
Forward voltage
Test Condition
Equivalent Circuit (Top View)
Unit
V
Marking
1
2007-11-01
