HN1K02FU
TOSHIBA Field Effect Transistor
Silicon N Channel MOS Type
HN1K02FU
High Speed Switching Applications
Analog Switch Applications
Unit in mm
2.5 V gate drive.
Low threshold voltage: Vth = 0.5V~1.5V
High speed
Enhancement-mode
Small package
Absolute Maximum Ratings (Ta = 25°C)
(Q1, Q2 Common)
Characteristic
Symbol
Rating
Unit
Drain-Source voltage
VDS
20
V
Gate-Source voltage
VGSS
10
V
ID
50
mA
Drain power dissipation
PD*
200
mW
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
−55~150
°C
DC Drain current
JEDEC
EIAJ
TOSHIBA
Weight: 6.8mg
―
―
2-2J1C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
*
Total rating
1
2007-11-01
