This product complies with the RoHS Directive (EU 2002/95/EC).
Schottky Barrier Diodes (SBD)
MA21D380G
Silicon epitaxial planar type
For high frequency rectification
Package
IF(AV) = 1 A rectification is possible
Low forward voltage VF
Large non-repetitive peak forward surge current IFSM
Code
SMini2-F2
Name
Pin
1: Anode
2: Cathode
M
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Features
Absolute Maximum Ratings Ta = 25°C
Symbol
Reverse voltage
VR
IFSM
Tj
Tstg
A
A
°C
–55 to +125
Non-repetitive peak forward surge
current *
1.0
125
IF(AV)
V
20
Forward current (Average)
Marking Symbol: 3U
V
30
VRM
Storage time
Unit
30
Maximum peak reverse voltage
Junction temperature
Rating
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Parameter
°C
Note) *: The peak-to-peak value in one cycle of 50 Hz sine wave (non-repetitive)
Electrical Characteristics Ta = 25°C±3°C
Symbol
Forward voltage
VF1
VF2
VF3
IR
Min
Typ
Max
Unit
IF = 0.5 A
0.34
0.38
V
IF = 0.7 A
0.36
0.40
IF = 1.0 A
0.38
0.42
VR = 30 V
100
on
tin
Reverse current
Conditions
ue
Parameter
Ct
isc
Terminal capacitance
ce
/D
Reverse recovery time *
trr
mA
VR = 10 V, f = 1 MHz
40
pF
IF = IR = 100 mA, Irr = 10 mA,
RL = 100 W
13
ns
Ma
int
en
an
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage
of current from the operating equipment.
3. *: trr measurement circuit
Input Pulse
Bias Application Unit (N-50BU)
tp
tr
10%
A
Pulse Generator
(PG-10N)
Rs = 50 Ω
Publication date: April 2008
VR
Wave Form Analyzer
(SAS-8130)
Ri = 50 Ω
SKH00163DED
90%
tp = 2 µs
tr = 0.35 ns
δ = 0.05
Output Pulse
t
IF
trr
t
Irr = 10 mA
IF = IR = 100 mA
RL = 100 Ω
1