Prod uct Bul le tin OP705A
March 1999
NPN Phototransistor with Base-Emitter Resistor
Types OP705A, OP705B, OP705C, OP705D
Features
Ab so lute Maxi mum Rat ings (TA = 25o C un less oth er wise noted)
•
•
•
•
Narrow receiving angle
Variety of sensitivity ranges
T-1 package style
Small package size for space limited
applications
• Base-emitter resistor provides ambient
light protection
Collector- Emitter Volt age. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 V
Emit ter Re verse Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 mA
Col lec tor DC Cur rent . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 mA
Stor age and Op er at ing Tem pera ture Range. . . . . . . . . . . . . . . . . . -40 o C to +100 o C
Lead Sol der ing Tem pera ture [1/16 inch (1.6 mm) from case for 5 sec. with sol der ing
iron] . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260o C(1)
Power Dis si pa tion . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100 mW(2)
Description
NOTES:
(1) RMA flux is recommended. Duration can be extended to 10 sec. max. when flow soldering.
Max. 20 grams force may be applied to leads when soldering.
(2) Derate linearly 1.33 mW/o C above 25o C.
(3) Light source is an unfiltered GaAs LED with a peak emission wavelength of 935 nm and a
radiometric intensity level which varies less than 10% over the entire lens surface of the
phototransistor being tested.
(4) The knee point irradiance is defined as the irradiance required to increase IC(ON) to 50 µA.
The OP705 series devices consist of
NPN silicon phototransistors molded in
blue tinted epoxy packages. The narrow
receiving angle provides excellent onaxis coupling. These devices are 100%
production tested using infrared light for
close correlation with Optek’s GaAs and
GaAlAs emitters.
Typi cal Per form ance Curves
Typi cal Spec tral Re sponse
Schematic
The phototransistor has an internal baseemitter resistor which provides protection
from low level ambient lighting
conditions. This feature is also useful
when the media being detected is semitransparent to infrared light in interruptive
applications.
Wave length - nm
Op tek Tech nol ogy, Inc.
1215 W. Crosby Road
Car roll ton, Texas 75006
3-40
(972)323- 2200
Fax (972)323-2396