PD - 95150
Advanced Process Technology
l Surface Mount (IRL3103S)
l Low-profile through-hole (IRL3103L)
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
l Lead-Free
Description
IRL3103SPbF
IRL3103LPbF
l
HEXFET® Power MOSFET
D
VDSS = 30V
RDS(on) = 12mΩ
G
Advanced HEXFET® Power MOSFETs from International
Rectifier utilize advanced processing techniques to
achieve extremely low on-resistance per silicon area.
This benefit, combined with the fast switching speed and
ruggedized device design that HEXFET power MOSFETs
are well known for, provides the designer with an
extremely efficient and reliable device for use in a wide
variety of applications.
ID = 64A
S
The D2Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible onresistance in any existing surface mount package. The
D2Pak is suitable for high current applications because of its
low internal connection resistance and can dissipate up to
2.0W in a typical surface mount application.
The through-hole version (IRL3103L) is available for lowprofile applications.
D2Pak
IRL3103S
TO-262
IRL3103L
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
IAR
EAR
dv/dt
TJ
TSTG
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
Max.
Units
64
45
220
94
0.63
± 16
34
22
5.0
-55 to + 175
A
W
W/°C
V
A
mJ
V/ns
°C
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Thermal Resistance
Parameter
RθJC
RθJA
www.irf.com
Junction-to-Case
Junction-to-Ambient (PCB mount)**
Typ.
Max.
Units
–––
–––
1.6
40
°C/W
1
04/19/04
