TECHNICAL DATA
PNP SMALL SIGNAL SILICON TRANSISTOR
Qualified per MIL-PRF-19500/291
Devices
2N2906A
2N2906AL
2N2906AUA
2N2906AUB
Qualified Level
JAN
JANTX
JANTXV
JANS
2N2907A
2N2907AL
2N2907AUA
2N2907AUB
MAXIMUM RATINGS
Ratings
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation
Symbol
@ TA = +250C
@ TC = +250C
All Types
Unit
VCEO
VCBO
VEBO
IC
PT(1)
PT(2 / 3)
60
60
5.0
600
0.4
1.8
Vdc
Vdc
Vdc
mAdc
W
W
Operating & Storage Junction Temperature Range
TJ, Tstg
1) Derate linearly 2.28 mW/0C for TA > +250C.
2) Derate linearly 10.3 mW/0C for TC > +250C.
3) For UA and UB surface mount case outlines: PT = 1.16 W;
derate linearly 6.6mW/0C for TC > +250C.
-65 to +200
0
C
TO-18* (TO-206AA)
4 PIN*
2N2906AUA, 2N2907AUA
3 PIN*
2N2906AUB, 2N2907AUB
*See appendix A for package outline
0
ELECTRICAL CHARACTERISTICS (TA = 25 C unless otherwise noted)
Characteristics
Symbol
Min.
V(BR)CEO
Max.
60
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
IC = 10 mAdc
Collector-Base Cutoff Current
VCE = 50 Vdc
VCE = 60 Vdc
Collector-Base Cutoff Current
VCE = 50 Vdc
Emitter-Base Cutoff Current
VEB = 4.0 Vdc
VEB = 5.0 Vdc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
Vdc
ICBO
10
10
ICES
50
IEBO
50
10
µAdc
ηAdc
ηAdc
ηAdc
µAdc
120101
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