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部品型式

K4E641612D-TC50

製品説明
仕様・特性

K4E661612D,K4E641612D CMOS DRAM 4M x 16bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 16 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -50 or -60), power consumption(Normal or Low power) are optional features of this family. All of this family have CAS-before-RAS refresh, RAS-only refresh and Hidden refresh capabilities. Furthermore, Self-refresh operation is available in L-version. This 4Mx16 EDO Mode DRAM family is fabricated using Samsung′s advanced CMOS process to realize high band-width, low power consumption and high reliability. FEATURES • Extended Data Out Mode operation • Part Identification • 2 CAS Byte/Word Read/Write operation - K4E661612D-TC/L(3.3V, 8K Ref.) - K4E641612D-TC/L(3.3V, 4K Ref.) • CAS-before-RAS refresh capability • RAS-only and Hidden refresh capability • Fast parallel test mode capability • Self-refresh capability (L-ver only) • LVTTL(3.3V) compatible inputs and outputs • Active Power Dissipation • Early Write or output enable controlled write Unit : mW Speed 8K -45 324 468 -50 288 432 -60 252 • JEDEC Standard pinout 4K 396 • Available in Plastic TSOP(II) packages • +3.3V±0.3V power supply • Refresh Cycles Refresh cycle K4E661612D* 8K K4E641612D 4K FUNCTIONAL BLOCK DIAGRAM Refresh time Normal L-ver 64ms 128ms RAS UCAS LCAS W * Access mode & RAS only refresh mode : 8K cycle/64ms(Normal), 8K cycle/128ms(L-ver.) CAS-before-RAS & Hidden refresh mode : 4K cycle/64ms(Normal), 4K cycle/128ms(L-ver.) Refresh Timer Refresh Counter tRAC tCAC tRC tHPC -45 45ns 12ns 74ns 17ns -50 50ns 13ns 84ns 20ns -60 60ns 15ns 104ns 25ns A0~A12 (A0~A11)*1 Col. Address Buffer Lower Data in Buffer Row Decoder Memory Array 4,194,304 x 16 Cells Row Address Buffer A0~A8 (A0~A9)*1 Vcc Vss VBB Generator Refresh Control • Performance Range Speed Control Clocks Column Decoder Note) *1 : 4K Refresh SAMSUNG ELECTRONICS CO., LTD. reserves the right to change products and specifications without notice. Sense Amps & I/O Part NO. Lower Data out Buffer Upper Data in Buffer Upper Data out Buffer DQ0 to DQ7 OE DQ8 to DQ15

ブランド

SAMSUNG

会社名

Samsung Electronics Co., Ltd

本社国名

韓国

事業概要

DRAM製品、モバイル機器の製造販売メーカー

供給状況

 
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