KM41C4000D, KM41V4000D
CMOS DRAM
4M x 1Bit CMOS Dynamic RAM with Fast Page Mode
DESCRIPTION
This is a family of 4,194,304 x 1bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells
within the same row. Power supply voltage (+5V or +3.3V), access time (-5, -6 or -7), power consumption(Normal or Low power), and
package type (SOJ or TSOP-II) are optional features of this family. All of this family have CAS-before-RAS refresh, RAS-only refresh and
Hidden refresh capabilities. Furthermore, self-refresh operation is available in Low power version.
This 4Mx1 Fast Page Mode DRAM family is fabricated using Samsung′s advanced CMOS process to realize high band-width, low power
consumption and high reliability. It may be used as main memory for main frames and mini computers, personal computer and high performance microprocessor systems.
• Fast Page Mode operation
FEATURES
• CAS-before-RAS refresh capability
• Part Identification
• RAS-only and Hidden refresh capability
• Self-refresh capability (3.3V, L-ver only)
- KM41C4000D/D-L(5V, 1K Ref.)
- KM41V4000D/D-L(3.3V, 1K Ref.)
• Fast parallel test mode capability
• TTL(5V)/LVTTL(3.3V) compatible inputs and outputs
• Common I/O using early write
• Active Power Dissipation
• JEDEC Standard pinout
Unit : mW
• Available in 26(20)-pin SOJ 300mil and TSOP(II)
Speed
3.3V
5V
-5
-
470
• +5V±10% power supply(5V product)
-6
220
415
• +3.3V±0.3V power supply(3.3V product)
-7
200
360
300mil packages
FUNCTIONAL BLOCK DIAGRAM
• Refresh Cycles
Refresh
cycle
KM41C4000D
Refresh Period
Normal
L-ver
1K
16ms
RAS
CAS
W
Control
Clocks
128ms
Refresh Timer
KM41V4000D
Row Decoder
Refresh Control
Refresh Counter
• Performance Range
Speed
tRAC
tCAC
tRC
-5
50ns
15ns
90ns 35ns
5V only
-6
60ns
15ns 110ns 40ns
5V/3.3V
-7
70ns
20ns 130ns 45ns
Remark
Memory Array
4,194,304 x1
Cells
5V/3.3V
tPC
Row Address Buffer
A0~A9
Col. Address Buffer
Vcc
Vss
VBB Generator
Column Decoder
SAMSUNG ELECTRONICS CO., LTD. reserves the right to
change products and specifications without notice.
Sense Amps & I/O
Part
NO.
Data in
Buffer
D
Data out
Buffer
Q
