NSS1C201L, NSV1C201L
100 V, 3.0 A, Low VCE(sat)
NPN Transistor
ON Semiconductor’s e2 PowerEdge family of low VCE(sat)
transistors are miniature surface mount devices featuring ultra low
saturation voltage (VCE(sat)) and high current gain capability. These
are designed for use in low voltage, high speed switching applications
where affordable efficient energy control is important.
Typical applications are DC−DC converters and power management
in portable and battery powered products such as cellular and cordless
phones, PDAs, computers, printers, digital cameras and MP3 players.
Other applications are low voltage motor controls in mass storage
products such as disc drives and tape drives. In the automotive
industry they can be used in air bag deployment and in the instrument
cluster. The high current gain allows e2PowerEdge devices to be
driven directly from PMU’s control outputs, and the Linear Gain
(Beta) makes them ideal components in analog amplifiers.
http://onsemi.com
100 VOLTS, 3.0 AMPS
NPN LOW VCE(sat) TRANSISTOR
COLLECTOR
3
1
BASE
Features
• NSV Prefix for Automotive and Other Applications Requiring
•
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
2
EMITTER
3
MAXIMUM RATINGS (TA = 25°C)
Symbol
Max
Collector-Emitter Voltage
VCEO
100
Vdc
Collector-Base Voltage
VCBO
140
Vdc
Emitter-Base Voltage
VEBO
7.0
Vdc
IC
2.0
A
ICM
3.0
A
Symbol
Max
Unit
Total Device Dissipation
TA = 25°C
Derate above 25°C
PD (Note 1)
490
mW
3.7
mW/°C
Thermal Resistance,
Junction−to−Ambient
RqJA (Note 1)
255
°C/W
Total Device Dissipation
TA = 25°C
Derate above 25°C
PD (Note 2)
710
mW
4.3
mW/°C
Thermal Resistance,
Junction−to−Ambient
RqJA (Note 2)
176
°C/W
Junction and Storage
Temperature Range
TJ, Tstg
−55 to
+150
°C
1
Unit
Rating
Collector Current − Continuous
Collector Current − Peak
2
SOT−23 (TO−236)
CASE 318
STYLE 6
MARKING DIAGRAM
THERMAL CHARACTERISTICS
Characteristic
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FR− 4 @ 100 mm2, 1 oz. copper traces.
2. FR− 4 @ 500 mm2, 1 oz. copper traces.
© Semiconductor Components Industries, LLC, 2014
September, 2014 − Rev. 4
1
VT MG
G
1
VT = Specific Device Code
M = Date Code*
G
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
Device
Package
Shipping†
NSS1C201LT1G,
NSV1C201LT1G
SOT−23
(Pb−Free)
3000 / Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Publication Order Number:
NSS1C201L/D
