LESHAN RADIO COMPANY, LTD.
High-Speed Switching Diode
MMBD914LT1
1
ANODE
3
CATHODE
3
1
2
MAXIMUM RATINGS
Rating
Reverse Voltage
Forward Current
Peak Forward Surge Current
CASE 318–08, STYLE 8
Symbol
VR
IF
I FM(surge)
Value
100
200
500
Symbol
PD
Max
225
Unit
mW
R θ JA
PD
1.8
556
300
mW/°C
°C/W
mW
R θ JA
T J , T stg
2.4
417
–55 to +150
SOT– 23 (TO–236AB)
Unit
Vdc
mAdc
mAdc
mW/°C
°C/W
°C
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR– 5 Board (1)
T A = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate, (2) T A = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
DEVICE MARKING
MMBD914LT1 = 5D
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
V (BR)
100
—
Vdc
OFF CHARACTERISTICS
Reverse Breakdown Voltage
(I R = 100 µAdc)
Reverse Voltage Leakage Current
(V R = 20 Vdc)
(V
R
IR
—
25
nAdc
—
5.0
µ Adc
CT
—
4.0
pF
VF
—
1.0
Vdc
t rr
—
4.0
ns
= 75 Vdc)
Diode Capacitance
(V R = 0, f = 1.0 MHz)
Forward Voltage
(I F = 10 mAdc)
Reverse Recovery Time
(I F = I R = 10 mAdc) (Figure 1)
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
G19–1/2
