DSC3001
Silicon NPN epitaxial planar type
Unit: mm
For general amplification
Complementary to DSA3001
DSC9001 in SSSMini3 type package
Features
High forward current transfer ratio hFE with excellent linearity
Low collector-emitter saturation voltage VCE(sat)
Halogen-free / RoHS compliant
(EU RoHS / UL-94 V-0 / MSL: Level 1 compliant)
Marking Symbol: C1
Packaging
DSC300100L Embossed type (Thermo-compression sealing): 10 000 pcs / reel (standard)
Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
VCBO
60
V
Collector-emitter voltage (Base open)
VCEO
50
VEBO
7
V
Collector current
IC
100
mA
Peak collector current
ICP
200
mA
Collector power dissipation
PC
100
mW
Junction temperature
Tj
150
°C
Operating ambient temperature
Topr
–40 to +85
°C
Storage temperature
Tstg
–55 to +150
SSSMini3-F2-B
SC-105AA
SOT-723
V
Emitter-base voltage (Collector open)
1: Base
2: Emitter
3: Collector
Panasonic
JEITA
Code
°C
Electrical Characteristics Ta = 25°C±3°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base voltage (Emitter open)
VCBO
IC = 10 mA, IE = 0
60
V
Collector-emitter voltage (Base open)
VCEO
IC = 2 mA, IB = 0
50
V
Emitter-base voltage (Collector open)
VEBO
IE = 10 mA, IC = 0
7
V
Collector-base cutoff current (Emitter open)
ICBO
VCB = 20 V, IE = 0
0.1
mA
Collector-emitter cutoff current (Base open)
ICEO
VCE = 10 V, IB = 0
100
mA
Forward current transfer ratio
hFE
VCE = 10 V, IC = 2 mA
460
0.3
V
Collector-emitter saturation voltage
VCE(sat)
210
IC = 100 mA, IB = 10 mA
0.13
Transition frequency
fT
VCE = 10 V, IC = 2 mA
150
MHz
Collector output capacitance
(Common base, input open circuited)
Cob
VCB = 10 V, IE = 0, f = 1 MHz
1.5
pF
Note)
Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: March 2014
Ver. EED
1
