Si6433DQ
Vishay Siliconix
P-Channel 2.5-V (G-S) MOSFET
PRODUCT SUMMARY
VDS (V)
rDS(on) (W)
0.06 @ VGS = –4.5 V
"4.0
0.09 @ VGS = –2.5 V
–12
ID (A)
"3.0
S*
TSSOP-8
8
D
7
3
6
S
4
5
G
S
D
D
1
S
2
S
G
D
Si6433DQ
* Source Pins 2, 3, 6 and 7
must be tied common.
Top View
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Drain-Source Voltage
VDS
–12
Gate-Source Voltage
VGS
"8
Continuous Drain Current (TJ = 150_C)a
150 C)
TA = 25_C
ID
TA = 70_C
"3.2
TA = 25_C
Maximum Power Dissipationa
–1.4
1.5
PD
TA = 70_C
Operating Junction and Storage Temperature Range
A
"20
IS
Continuous Source Current (Diode Conduction)a
V
"4.0
IDM
Pulsed Drain Current
Unit
W
1.0
TJ, Tstg
–55 to 150
_C
Symbol
Limit
Unit
RthJA
83
_C/W
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Notes
a. Surface Mounted on FR4 Board, t v 10 sec.
For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm
Document Number: 70168
S-49534—Rev. G, 06-Oct-97
www.vishay.com S FaxBack 408-970-5600
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