Si9434DY
Siliconix
P-Channel Enhancement-Mode MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(ON) (W)
0.040 @ VGS = –4.5 V
"6.4
0.060 @ VGS = –2.5 V
–20
ID (A)
"5.1
Recommended upgrade: Si9424DY
S S S
SO-8
S
8
D
2
7
D
S
3
6
D
G
4
5
D
S
1
G
Top View
D D D D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
PARAMETER
SYMBOL
LIMIT
Drain-Source Voltage
VDS
–20
Gate-Source Voltage
VGS
"8
Continuous Drain Current (TJ = 150_C)A
150 C)
TA = 25_C
TA = 70_C
ID
"5.1
TA = 25_C
Maximum Power DissipationA
Dissi ation
TA = 70_C
Operating Junction and Storage Temperature Range
"10
IS
Continuous Source Current (Diode Conduction)A
V
"6.4
IDM
Pulsed Drain Current
UNIT
A
–2.5
2.5
PD
W
1.6
TJ, Tstg
–55 to 150
_C
SYMBOL
LIMIT
UNIT
RthJA
50
_C/W
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-AmbientA
Notes
A. Surface Mounted on FR4 Board, t v 10 sec.
Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70147.
A SPICE Model data sheet is available for this product (FaxBack document #70528).
Vishay-Siliconix, 2201 Laurelwood Road, Santa Clara, CA 95054 S Phone (408)988-8000 S FaxBack (408)970-5600 S www.siliconix.com
S-56981—Rev. H, 15-Jun-98
Siliconix was formerly a division of TEMIC Semiconductors
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