SILICON EPITAXIAL
NPN TRANSISTOR
BUX39
•
High Current Capability.
•
Hermetic TO3 Metal package.
•
Ideally suited for Motor Control, Switching
and Linear Applications
•
Screening Options Available
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated)
VCBO
VCEX
VCER
VCEO
VEBO
IC
ICM
IB
PD
Collector – Base Voltage
Collector – Emitter Voltage
Collector – Emitter Voltage
Collector – Emitter Voltage
Emitter – Base Voltage
Continuous Collector Current
Peak Collector Current
Base Current
Total Power Dissipation at
VBE = -1.5V
RBE = 100
tp = 10ms
TC = 25°C
Derate Above 25°C
TJ
Tstg
Junction Temperature Range
Storage Temperature Range
120V
120V
110V
90V
7V
30A
40A
6A
120W
0.68W/°C
-65 to +200°C
-65 to +200°C
THERMAL PROPERTIES
Symbols
Parameters
RθJC
Max.
Thermal Resistance, Junction To Case
Units
1.46
°C/W
Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice.
Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However
Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to
verify that datasheets are current before placing orders.
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Semelab Limited
Telephone +44 (0) 1455 556565
Fax +44 (0) 1455 552612
Email: sales@semelab-tt.com
Website: http://www.semelab-tt.com
Document Number 9312
Issue 1
Page 1 of 3
