SOT223 PNP SILICON PLANAR
MEDIUM POWER TRANSISTOR
BCP53
ISSUE 3 AUGUST 1995
7
FEATURES
* Suitable for AF drivers and output stages
* High collector current and Low VCE(sat)
COMPLEMENTARY TYPE
BCP56
PARTMARKING DETAILS
C
BCP53
BCP53 10
E
C
B
BCP53 16
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
Collector-Base Voltage
VCBO
VALUE
-100
UNIT
V
Collector-Emitter Voltage
VCEO
-80
V
Emitter-Base Voltage
VEBO
-5
V
-1.5
A
Peak Pulse Current
ICM
Continuous Collector Current
IC
-1
A
Power Dissipation at Tamb =25°C
Ptot
2
W
Operating and Storage Temperature
Range
Tj:Tstg
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL
MIN.
Collector-Base
Breakdown Voltage
V(BR)CBO
Collector-Emitter
Breakdown Voltage
TYP.
MAX.
UNIT
CONDITIONS.
-100
V
IC=-100µ A
V(BR)CEO
-80
V
IC=- 10mA *
Emitter-Base
Breakdown Voltage
V(BR)EBO
-5
V
IE=-10µ A
Collector Cut-Off
Current
ICBO
-100
-20
nA
VCB=-30V
VCB=-30V, Tamb=150°C
-10
Emitter Cut-Off Current IEBO
µA
µA
VEB=-5V
Collector-Emitter
Saturation Voltage
VCE(sat)
-0.5
V
IC=-500mA, IB=-50mA*
Base-Emitter Turn-On
Voltage
VBE(on)
-1.0
V
IC=-500mA, VCE=-2V*
Static Forward Current hFE
Transfer Ratio
BCP53-10
BCP53-16
Transition Frequency
fT
40
25
63
100
250
100
160
125
IC=-150mA,
IC=-500mA,
IC=-150mA,
IC=-150mA,
160
250
MHz
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%
3 - 15
VCE=-2V*
VCE=-2V*
VCE=-2V*
VCE=-2V*
IC=-50mA, VCE=-10V,
f=100MHz
