STP80NS04Z
®
N - CHANNEL CLAMPED 7.5mΩ - 80A - TO-220
FULLY PROTECTED MESH OVERLAY™ MOSFET
TYPE
STP80NS04Z
s
s
s
s
V DSS
R DS(on)
CLAMPED <0.008 Ω
ID
80 A
TYPICAL RDS(on) = 0.0075 Ω
100% AVALANCHE TESTED
LOW CAPACITANCE AND GATE CHARGE
175 oC MAXIMUM JUNCTION
TEMPERATURE
3
DESCRIPTION
This fully clamped Mosfet is produced by using
the latest advanced Company’s Mesh Overlay
process which is based on a novel strip layout.
The inherent benefits of the new technology
coupled with the extra clamping capabilities make
this product particularly suitable for the harshest
operation conditions such as those encountered
in the automotive environment. Any other
application requiring extra ruggedness is also
recommended.
1
2
TO-220
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
ABS, SOLENOID DRIVERS
s MOTOR CONTROL
s DC-DC CONVERTERS
s
ABSOLUTE MAXIMUM RATINGS
Symbol
Value
Un it
V DS
Drain-source Voltage (VGS = 0)
Parameter
CLAMPED
V
V DG
Drain- gate Voltage
CLAMPED
V
V GS
G ate-source Voltage
CLAMPED
V
80
A
ID
Drain Current (continuous) at Tc = 25 oC
o
ID
Drain Current (continuous) at Tc = 100 C
60
A
I DG
Drain Gate Current (continuous)
± 50
mA
I GS
G ate Source Current (continuous)
± 50
mA
I DM (•)
Drain Current (pulsed)
320
A
T otal Dissipation at Tc = 25 o C
160
W
Derating Factor
P tot
1.06
W /o C
V ESD (G-S ) G ate-Source ESD (HBM - C= 100pF , R=1.5 kΩ)
2
kV
V ESD (G-D) G ate-Drain ESD (HBM - C= 100pF, R=1.5 kΩ)
4
kV
V ESD ( D-S) Drain-Source ESD (HBM - C= 100pF, R=1.5 kΩ)
4
Ts tg
Tj
kV
Storage Temperature
-65 to 175
o
Max. Operating Junction Temperature
-40 to 175
o
(•) Pulse width limited by safe operating area
December 1999
C
C
( 1) ISD ≤ 80 A, di/dt ≤ 300 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
1/8
