BC807, BC808
Small Signal Transistors (PNP)
TO-236AB (SOT-23)
.122 (3.1)
.110 (2.8)
.016 (0.4)
Mounting Pad Layout
Top View
3
.056 (1.43)
.052 (1.33)
0.031 (0.8)
.016 (0.4)
.007 (0.175)
.005 (0.125)
max. .004 (0.1)
.037(0.95) .037(0.95)
0.035 (0.9)
Pin Configuration
1 = Base 2 = Emitter
3 = Collector
2
0.079 (2.0)
.045 (1.15)
.037 (0.95)
1
0.037 (0.95)
0.037 (0.95)
.102 (2.6)
.094 (2.4)
.016 (0.4)
Dimensions in inches and (millimeters)
Mechanical Data
Features
Case: SOT-23 Plastic Package
Weight: approx. 0.008 grams
Marking
BC807-16 = 5A BC808-16 = 5E
Codes:
-25 = 5B
-25 = 5F
-40 = 5C
-40 = 5G
Packaging Codes/Options:
E8/10K per 13” reel (8mm tape), 30K/box
E9/3K per 7” reel (8mm tape), 30K/box
• PNP Silicon Epitaxial Planar Transistors for
switching, AF driver and amplifier applications.
• Especially suited for automatic insertion in thick
and thin-film circuits.
• These transistors are subdivided into three groups
(-16, -25, and -40) according to their current gain.
• As complementary types, the NPN transistors
BC817 and BC818 are recomended.
Maximum Ratings and Thermal Characteristics (T
A
Parameter
= 25°C unless otherwise noted)
Symbol
Value
Unit
–VCES
50
30
V
–VCEO
45
25
V
–VEBO
5
V
–IC
800
mA
Peak Collector Current
–ICM
1000
mA
Peak Base Current
–IBM
200
mA
IEM
1000
mA
Collector-Emitter Voltage
(Base shorted)
BC807
BC808
Collector-Emitter Voltage
(Base open)
BC807
BC808
Emitter-Base Voltage
Collector Current
Peak Emitter Current
Power Dissipation at TSB = 50 ˚C
Thermal Resistance Junction to Ambient Air
Thermal Resistance Junction to Substrate Backside
Ptot
RθJA
RθSB
310
(1)
mW
450
(1)
°C/W
320
(1)
°C/W
Junction Temperature
Tj
150
°C
Storage Temperature Range
TS
–65 to +150
°C
Note: (1) Device on fiberglass substrate, see layout on next page.
3/20/01
