BC817-16/BC817-25
BC817-40
General Purpose Transistor
NPN Silicon
COLLECTOR
3
1
1
BASE
* “G” Lead(Pb)-Free
3
2
2
EMITTER
SOT-23
M aximum R atings ( TA=25 C unless otherwise noted)
Rating
Collector-Emitter Voltage
Symbol
VCEO
Value
45
Unit
Vdc
Collector-Base Voltage
VCBO
50
Vdc
Emitter-Base Voltage
VEBO
5.0
Vdc
IC
500
mAdc
Collector Current-Continuous
Thermal Characteristics
Characteristics
Total Device Dissipation FR-5 Board
(Note 1.)TA=25 C
Derate above 25 C
Thermal Resistance, Junction to Ambient (Note 1.)
Total Device Dissipation Alumina
Substrate, (Note 2.) TA=25 C
Derate above 25 C
Thermal Resistance, Junction to Ambient (Note 2.)
Junction and Storage, Temperature Range
Device Marking
BC817-16=6A, BC817-25=6B, BC817-40=6C
1.FR-5=1.0 x 0.75 x 0.062 in.
2.Alumina=0.4 x 0.3 x 0.024 in. 99.5% alumina
WE ITR O N
http://www.weitron.com.tw
Symbol
PD
Max
Unit
225
1.8
mW
mW/ C
C/W
R qJA
556
PD
300
2.4
R qJA
417
mW
mW/ C
C/W
TJ,Tstg
-55 to +150
C
