BC856A/B-BC857A/B/C
BC858A/B/C-BC859B/C
General Purpose Transistor
PNP Silicon
* “G” Lead(Pb)-Free
COLLECTOR
3
1
1
BASE
2
SOT-23
Collector-Base Voltage
BC856
BC857
BC858,BC859
BC856
BC857
BC858,BC859
Symbol
VCEO
Thermal Characteristics
Characteristics
Total Device Dissipation FR-5 Board (1)
(Note 1.)TA=25 C
Derate above 25 C
Thermal Resistance, Junction to Ambient
VEBO
IC
Symbol
Junction and Storage, Temperature
Unit
V
V
V
mAdc
Max
Unit
225
1.8
mW
mW/ C
C/W
PD
R θJA
556
PD
300
2.4
R θJA
417
mW
mW/ C
C/W
TJ,Tstg
-55 to +150
C
Total Device Dissipation Alumina
Substrate, (Note 2.) TA=25 C
Derate above 25 C
Thermal Resistance, Junction to Ambient
Value
-65
-45
-30
-80
-50
-30
-5.0
-100
VCBO
Emitter-Base VOltage
Collector Current-Continuous
XX = Device
Code (See
2 Table Below)
1
2
EMITTER
Maximum Ratings ( TA=25 C unless otherwise noted)
Rating
Collector-Emitter Voltage
MARKING DIAGRAM
3
3
1.F R -5=1.0 x 0.75 x 0.062 in. 2.Alumina=0.4 x 0.3 x 0.024 in. 99.5% alumina.
Electrical Characteristics
(TA=25 C Unless Otherwise noted)
Symbol
Characteristics
Min
Typ
Max
Unit
Off Characteristics
Collector-Emitter Breakdown Voltage
(IC= -10mA)
BC856 Series
BC857 Series
BC858, BC859 Series
V(BR)CEO
-65
-45
-30
-
-
V
Collector-Emitter Breakdown Voltage
(IC=-10 µA ,VEB=0)
BC856 Series
BC857 Series
BC858, BC859 Series
V(BR)CES
-80
-50
-30
-
-
V
Collector-Base Breakdown Voltage
(IC=-10 µA)
BC856 Series
BC857 Series
BC858, BC859 Series
V(BR)CBO
-80
-50
-30
-
-
V
Emitter-Base Breakdown Voltage
(IE=-1.0 µA)
BC856 Series
BC857 Series
BC858, BC859 Series
V(BR)EBO
-5.0
-5.0
-5.0
-
-
V
ICBO
-
-
-15
-4.0
nA
mA
Collector Cutoff Current (VCB=-30V)
(VCB=-30V, TA=150 C)
WEITRON
http://www.weitron.com.tw
1/4
Rev A 12-Apr-05
