Preliminary Data Sheet No. PD60083-K
IR51H(D)224
IR51H(D)320
IR51H(D)420
(NOTE: For new designs, we
recommend the IR53H(D)420-P)
SELF-OSCILLATING HALF BRIDGE
Product Summary
Features
•
•
•
•
Output Power MOSFETs in half-bridge configuration
High side gate drive designed for bootstrap operation
Bootstrap diode integrated into package (HD type)
Accurate timing control for both Power MOSFETs
Matched delay to get 50% duty cycle
Matched deadtime of 1.2us
• Internal oscillator with programmable frequency
f =
VIN (max) 250V (IR51H(D)224)
400V (IR51H(D)320)
500V (IR51H(D)420)
Duty Cycle
50%
Deadtime
1.2µs
Rds(on)
1
1. 4 × ( RT + 75 Ω ) × CT
• 15.6V Zener clamped Vcc for offline operation
• Half-bridge output is out of phase with RT
• Micropower startup
1.1Ω (IR51H(D)224)
3.0Ω (IR51H(D)320)
3.6Ω (IR51H(D)420)
PD (TA = 25oC)
2.0W
Package
Description
The IR51H(D)XXX are complete high voltage, high speed, selfoscillating half-bridge circuits. Proprietary HVIC and latch immune CMOS technologies, along with the HEXFET® power
MOSFET technology, enable ruggedized single package construction. The front-end features a programmable oscillator which functions similar to the CMOS 555 timer. The supply to the control
circuit has a zener clamp to simplify offline operation. The output
features two HEXFETs in a half-bridge configuration with an internally set deadtime designed for minimum cross-conduction in
the half-bridge. Propagation delays for the high and low side
9-Lead SIP
without leads 5 and 8
power MOSFETs are matched to simplify
use in 50% duty cycle applications. The
device can operate up to 500 volts.
Typical Connection
DC Bus
VIN
D1
IR51H(D)XXX
1
2
Vcc
VB
RT
VIN
CT
VO
6
External
Fast recovery diode D1 is
not required for HD type
9
RT
3
7
CT
4
COM
TO,
LOAD
COM
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