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1N457A-S1
1N/FDLL 456/A / 457/A / 458/A / 459/A Discrete POWER & Signal Technologies N 1N/FDLL 456/A - 1N/FDLL 459/A COLOR BAND MARKING DEVICE LL-34 THE PLACEMENT OF THE EXPANSION GAP HAS NO RELATIONSHIP TO THE LOCATION OF THE CATHODE TERMINAL DO-35 1ST BAND 2ND BAND FDLL456 FDLL456A FDLL457 FDLL457A FDLL458 FDLL458A FDLL459 FDLL459A BROWN BROWN RED RED RED RED RED RED WHITE WHITE BLACK BLACK BROWN BROWN RED RED High Conductance Low Leakage Diode Sourced from Process 1M. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter Value Units V V V V mA W IV Working Inverse Voltage IO Average Rectified Current 25 60 125 175 200 IF DC Forward Current 500 mA if Recurrent Peak Forward Current 600 mA if(surge) Peak Forward Surge Current Pulse width = 1.0 second Pulse width = 1.0 microsecond Storage Temperature Range 1.0 4.0 -65 to +200 A A °C 175 °C Tstg TJ 456/A 457/A 458/A 459/A Operating Junction Temperature *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 200 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol PD RθJA TA = 25°C unless otherwise noted Characteristic Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Ambient Max Units 1N / FDLL 456/A - 459/A 500 3.33 300 mW mW/°C °C/W
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