NPN SILICON PLANAR MEDIUM
POWER DARLINGTON TRANSISTOR
FXT38C
ISSUE 1 SEPT 93
FEATURES
* 60 Volt VCEO
* Gain of 10K at IC=0.5 Amp
B
C
REFER TO BCX38 FOR GRAPHS
E
E-Line
TO92 Compatible
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
VCBO
80
V
Collector-Emitter Voltage
VCEO
60
V
Emitter-Base Voltage
VEBO
10
V
Peak Pulse Current
I CM
2
A
Continuous Collector Current
IC
800
mA
Power Dissipation at Tamb=25°C
Ptot
1
W
Operating and Storage Temperature Range
Tj:Tstg
-55 to +200
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C).
PARAMETER
SYMBOL
MIN.
Collector-Base
Breakdown Voltage
V(BR)CBO
Collector-Emitter
Sustaining Voltage
UNIT
CONDITIONS.
80
V
IC=10µ A, IE=0
VCEO(sus)
60
V
IC=10mA, IB=0
Emitter-Base
Breakdown Voltage
V(BR)EBO
10
V
IE=10µ A, IC=0
Collector Cut-Off
Current
ICBO
100
nA
VCB=60V, IE=0
Emitter Cut-Off Current IEBO
100
nA
VEB=8V, IC=0
Collector-Emitter
Saturation Voltage
VCE(sat)
1.25
V
IC=800mA, IB=8mA*
Base-Emitter
Turn-On Voltage
VBE(on)
1.8
V
IC=800mA, VCE=5V*
Static Forward Current hFE
Transfer Ratio
TYP.
MAX.
5000
10000
IC=100mA, VCE=5V*
IC=500mA, VCE=5V*
* Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
3-29
