2SD1409A
TOSHIBA Transistor
Silicon NPN Triple Diffused Type (Darlington)
2SD1409A
Industrial Applications
High Voltage Switching Applications
Unit: mm
•
High DC current gain: hFE = 600 (min.) (VCE = 2 V, IC = 2 A)
•
Monolithic construction with built-in base-emitter shunt resistor
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
600
V
Collector-emitter voltage
VCEO
400
V
Emitter-base voltage
VEBO
5
V
Collector current
IC
6
A
Base current
IB
1
A
Ta = 25°C
Collector power
dissipation
Tc = 25°C
PC
2.0
25
W
Tj
Storage temperature range
150
°C
JEDEC
Tstg
Junction temperature
−55 to 150
°C
JEITA
―
SC-67
TOSHIBA
2-10R1A
Note1: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
Weight: 1.7 g (typ.)
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Equivalent Circuit
Collector
Base
≈ 2.5 kΩ
≈ 200 Ω
Emitter
1
2009-12-21