MITSUBISHI LSIs
M5M5408AFP,TP,RT-70L-I,-70LL-I,
-10L-I,-10LL-I
4194304-BIT (524288-WORD BY 8-BIT) CMOS STATIC RAM
DESCRIPTION
PIN CONFIGURATION (TOP VIEW)
FEATURES
Type
Access
time
(max)
M5M5408AFP,TP,RT-70L-I
M5M5408AFP,TP,RT-10L-I
Power supply current
Active
(max)
70ns
100ns
Stand-by
(max)
VCC(5V)
A15
30 A17
29 W
28 A13
27 A8
26 A9
25 A11
24 OE
23 A10
22 S
21 DQ8
20 DQ7
19 DQ6
18 DQ5
17 DQ4
32
31
Outline 32P2M-A(FP)
32P3Y-H(TP)
200µA
(Vcc=5.5v)
90mA
(Vcc=5.5V)
70ns
100ns
(5V)VCC
40µA
(Vcc=5.5v)
• Single +5V power supply
• No clocks, No refresh
• All inputs and outputs are TTL compatible.
• Easy memory expansion and power down by S
• Data retention supply voltage=+2.0V
• Three-state outputs: OR-tie capability
• OE prevents data contention in the I/O bus
• Common Data I/O
• Small stand-by current………………0.4µA(typ.)
• Package
M5M5408AFP : 32 pin 525 mil SOP
M5M5408ATP : 32 pin 400 mil TSOP(II)
M5M5408ART : 32 pin 400 mil TSOP(II)
A15
A17
W
A13
A8
A9
A11
OE
A10
S
DQ8
DQ7
DQ6
DQ5
DQ4
32
1
31
2
30
3
29
28
27
26
25
24
23
M5M5408ART
-I
M5M5408AFP,TP,RT-70LL-I
M5M5408AFP,TP,RT-10LL-I
A18 1
A16 2
A14 3
A12 4
A7 5
A6 6
A5 7
A4 8
A3 9
A2 10
A1 11
A0 12
DQ1 13
DQ2 14
DQ3 15
(0V)GND 16
M5M5408AFP,TP
-I
The M5M5408A is 4,194,304-bit CMOS static RAM organized as
524,288-words by 8-bit, fabricated using high-performance
quadruple-polysilicon and double metal CMOS technology.
The use of thin film transistor (TFT) load cells and CMOS periphery
results in a high density and low power static RAM.
The
M5M5408A is designed for memory applications where the high
performance, high reliability, large storage, simple interfacing and
battery back-up are important design objectives.
The M5M5408A is offered in a 32-pin plastic small outline
package (SOP) and a 32-pin thin small outline package (TSOP),
providing high board level packing densities. Two types of TSOP
packages are available, M5M5408ATP(normal lead bend type
package) and M5M5408ART (reverse lead bend type package).
Using both two types makes it easy to design a printed circuit
board.
4
5
6
7
8
9
10
22
11
21
12
20
13
19
14
18
15
17
16
A18
A16
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
DQ1
DQ2
DQ3
GND(0V)
Outline 32P3Y-J(RT)
APPLICATION
Small capacity memory units, IC card, Battery operating system,
asynchronous server system
MITSUBISHI
ELECTRIC
1
