製品説明 仕様・特性: IXTP2N100 Transistors N-Channel Enhancement MOSFET Military/High-RelN V(BR)DSS (V)1.0k V(BR)GSS (V)20 I(D) Max. (A)2.0 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)75 Minimum Operating Temp (øC) Maximum Operating Temp (øC)150õ Thermal Resistance Junc-Case Thermal Resistance Junc-Amb. V(GS)th Max. (V) V(GS)th (V) (Min) @(VDS) (V) (Test Condition) @I(D) (A) (Test Condition) I(DSS) Max. (A) @V(DS) (V) (Test Condition) @Temp (øC) (Test Condition) I(GSS) Max. (A)100n

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IXTP32P05T	IXTP32P20T	IXTP340N04T4	IXTP36N30P	IXTP36P15P
IXTP3N100D2	IXTP3N100P	IXTP3N120	IXTP3N50D2	IXTP3N50P
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IXTP450P2	IXTP460P2	IXTP48N20T	IXTP48P05T	IXTP4N65X2
IXTP4N80P	IXTP50N20P	IXTP50N25T	IXTP52P10P	IXTP5N50P
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IXTP2N100 90730

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