HiPerFETTM Power
MOSFETs
VDSS
IXFK25N90 IXFX25N90
IXFK26N90 IXFX26N90
ID25
RDS(on)
900V
25A
330mΩ
Ω
900V
26A
300mΩ
Ω
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
TO-264
Symbol
Test Conditions
Maximum Ratings
VDSS
VDGR
TJ = 25°C to 150°C
TJ = 25°C to 150°C, RGS = 1MΩ
900
900
V
V
VGSS
VGSM
Continuous
Transient
± 20
± 30
V
V
G
ID25
IDM
ID25
IDM
TC
TC
TC
TC
25N90
25N90
26N90
26N90
25
100
26
104
A
A
A
A
PLUS247
IA
TC = 25°C
25N90
25
A
26N90
EAS
TC = 25°C
26
3
A
J
dV/dt
IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C
5
V/ns
PD
TC = 25°C
560
W
-55 ... +150
150
-55 ... +150
°C
°C
°C
300
260
°C
°C
1.13/10
Nm/lb.in.
20..120 /4.5..27
N/lb.
10
6
g
g
= 25°C
= 25°C, pulse width limited by TJM
= 25°C
= 25°C, pulse width limited by TJM
TJ
TJM
Tstg
TL
TSOLD
1.6mm (0.062 in.) from case for 10s
Plastic body for 10s
Md
Mounting torque (IXFK)
FC
Mounting force
Weight
TO-264
TO-247
(IXFX)
D
(TAB)
S
(TAB)
G = Gate
S = Source
D = Drain
TAB = Drain
Features
International standard packages
Avalanche Rated
Low package inductance
Low RDS(ON) HDMOS Process
Fast intrinsic diode
Advantages
Symbol
Test Conditions
BVDSS
VGS = 0V, ID = 3mA
900
VGS(th)
VDS = VGS, ID = 8mA
3.0
IGSS
VGS = ± 20V, VDS = 0V
IDSS
VDS = 0.8 • VDSS
VGS = 0V
RDS(on)
VGS = 10V, ID = 0.5 • ID25, Note 1
© 2008 IXYS CORPORATION,All rights reserved
Characteristic Values
(TJ = 25°C unless otherwise specified)
Min. Typ. Max.
V
5.0
V
± 200
nA
100 μA
2 mA
TJ = 125°C
25N90
26N90
330 mΩ
300 mΩ
Easy to mount
Space savings
High power density
Applications:
Switched-mode and resonant-mode
power supplies
DC-DC Converters
Battery chargers
DC choppers
AC motor drives
Temperature & lighting controls
DS9855D(12/08)
