HOME＞在庫検索＞在庫情報
K9F1208U0B-PCB
K9F1208R0B K9F1208B0B K9F1208U0B FLASH MEMORY Document Title 64M x 8 Bit NAND Flash Memory Revision History Revision No. History 0.0 0.1 Draft Date Initial issue. 1. Note 1 ( Program/Erase Characteristics) is added( page 14 ) 2. NAND Flash Technical Notes is changed. -Invalid block -> initial invalid block ( page 16 ) -Error in write or read operation ( page 17 ) -Program Flow Chart ( page 17 ) 3. Vcc range is changed -2.4V~2.9V -> 2.5V~2.9V -1.7V~1.95V ->1.65V~1.95V 4. Multi plane operation and Copy-Back Program are not supported with 1.8V Remark Apr. 24th 2004 Oct. 11th.2004 Advance Preliminary device. 0.2 1. Icc 15mA -> 20mA for 1.8V device Apr. 22nd. 2005 0.3 1. The flow chart to creat the initial invalid block table is changed. May. 6th. 2005 Note : For more detailed features and specifications including FAQ, please refer to Samsung’s Flash web site. http://www.samsung.com/Products/Semiconductor/Flash/TechnicalInfo/datasheets.htm The attached datasheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions about device. If you have any questions, please contact the SAMSUNG branch office near you. 1
SAMSUNG
Samsung Electronics Co., Ltd
韓国
DRAM製品、モバイル機器の製造販売メーカー
宅配業者の代金引換又は商品到着後一週間以内の銀行振込となります。
