CMOS SRAM
KM6161002B, KM6161002BI
Document Title
64Kx16 Bit High Speed Static RAM(5.0V Operating), Revolutionary Pin out.
Operated at Commercial and Industrial Temperature Range.
Revision History
Rev No.
History
Draft Data
Remark
Rev. 0.0
Initial release with Design Target.
Apr. 1st, 1997
Design Target
Rev. 1.0
Release to Preliminary Data Sheet.
1. Replace Design Target to Preliminary.
Jun. 1st, 1997
Preliminary
Rev. 2.0
Release to Final Data Sheet.
2.1. Delete Preliminary
2.2. Delete L-version.
2.3. Delete Data Retention Characteristics and Waveform.
2.4. Add Capacitive load of the test environment in A.C test load
2.5. Change D.C characteristics
Previous spec.
Changed spec.
Items
(8/10/12ns part)
(8/10/12ns part)
Icc
200/190/180mA
200/195/190mA
Isb
30mA
50mA
Feb. 25th, 1998
Final
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right
to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of th is
device. If you have any questions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.
-1-
Rev 2.0
February 1998
