PRELIMINARY
K6R4008C1A-C, K6R4008C1A-E, K6R4008C1A-I
CMOS SRAM
Document Title
512Kx8 Bit High Speed Static RAM(5V Operating), Revolutionary Pin out.
Operated at Commercial, Extended and Industrial Temperature Ranges.
Revision History
Rev No.
History
Draft Data
Rev. 0.0
Initial release with Design Target.
Jun. 14th, 1996
Design Target
Rev. 0.5
Release to Preliminary Data Sheet.
0.1. Replace Design Target to Preliminary.
0.2. Delete 12ns part but add 17ns part.
0.3. Relax D.C and A.C parameters and insert new parameter(Icc1)
with the test condition.
0.3.1. Insert Icc1 parameter with the test condition as address is
increased with binary count.
0.3.2. Relax D.C and A.C parameters.
Previous spec.
Relaxed spec.
Items
(15/ - /20ns part)
(15/17/20ns part)
Icc
190/ - /180mA
220/215/210mA
tCW
10/ - /12ns
12/13/14ns
tAW
10/ - /12ns
12/13/14ns
tWP(OE=H)
10/ - /12ns
12/13/14ns
tWP1(OE=L)
12/ - /14ns
15/17/20ns
tDW
7/ - /9ns
8/ 9/10ns
Sep. 16th, 1996
Preliminary
Rev. 1.0
Release to Final Data Sheet.
1.1. Delete Preliminary.
1.2. Delete Icc1 parameter with the test condition.
1.3. Update D.C parameters.
Previous spec.
Updated spec.
Items
(15/17/20ns part)
(15/17/20ns part)
Icc
220/215/210mA
170/165/160mA
1.4. Add the test condition for VOH1 with Vcc=5V±5% at 25°C.
1.5. Add timing diagram to define tWP as ″(Timing Wave Form of
Write Cycle(CS=Low fixed)″.
Jun. 5th, 1997
Final
Rev. 2.0
2.1 Add extended and industrial temperature range parts.
Jun. 5th, 1997
Final
Remark
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the
specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any questions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.
-1-
Rev 2.0
February 1998
