KSE13006/13007
KSE13006/13007
High Voltage Switch Mode Application
• High Speed Switching
• Suitable for Switching Regulator and Motor Control
TO-220
1
1.Base
2.Collector
3.Emitter
NPN Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
VCBO
Collector-Base Voltage
Parameter
: KSE13006
: KSE13007
Value
600
700
Units
V
V
VCEO
Collector-Emitter Voltage
: KSE13006
: KSE13007
300
400
V
V
VEBO
Emitter- Base Voltage
9
V
IC
Collector Current (DC)
8
A
ICP
Collector Current (Pulse)
16
A
IB
Base Current
PC
Collector Dissipation (TC=25°C)
TJ
TSTG
4
A
80
W
Junction Temperature
150
°C
Storage Temperature
- 65 ~ 150
°C
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
BVCEO
Parameter
Collector- Emitter Breakdown Voltage
: KSE13006
: KSE13007
Test Condition
IC = 10mA, IB = 0
Min.
Typ.
Max.
300
400
Units
V
V
IEBO
Emitter Cut-off Current
VEB = 9V, IC = 0
hFE
*DC Current Gain
VCE = 5V, IC = 2A
VCE = 5V, IC = 5A
VCE(sat)
*Collector-Emitter Saturation Voltage
IC = 2A, IB = 0.4A
IC = 5A, IB = 1A
IC = 8A, IB = 2A
1
2
3
V
V
V
VBE (sat)
*Base-Emitter Saturation Voltage
IC = 2A, IB = 0.4A
IC = 5A, IB = 1A
1.2
1.6
V
V
Cob
Output Capacitance
VCB = 10V, f = 0.1MHz
fT
Current Gain Bandwidth Product
VCE = 10V, IC = 0.5A
VCC = 125V, IC = 5A
IB1 = -IB2 = 1A
RL = 50Ω
tON
Turn On Time
tSTG
Storage Time
tF
Fall Time
1
8
5
mA
60
30
110
pF
4
MHz
1.6
µs
3
µs
0.7
µs
* Pulse test: PW≤300µs, Duty cycle≤2%
©2000 Fairchild Semiconductor International
Rev. A1, December 2000
