2SK3746
Ordering number : ENN8283
2SK3746
N-Channel Silicon MOSFET
High-Voltage, High-Speed Switching
Applications
Features
•
•
•
Low ON-resistance, low input capacitance, ultrahigh-speed switching.
High reliability (Adoption of HVP process).
Avalanche resistance guarantee.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Conditions
Ratings
Unit
Drain-to-Source Voltage
VDSS
1500
Gate-to-Source Voltage
VGSS
±20
V
2
A
Drain Current (DC)
ID
Drain Current (Pulse)
IDP
PW≤10µs, duty cycle≤1%
V
4
A
2.5
W
Allowable Power Dissipation
PD
110
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Avalanche Energy (Single Pulse) *1
EAS
42
mJ
Avalanche Current *2
IAV
2
A
Tc=25°C
*1 VDD=99V, L=20mH, IAV=2A
*2 L≤20mH, Single pulse
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
V(BR)DSS
IDSS
IGSS
Conditions
ID=1mA, VGS=0V
VDS=1200V, VGS=0V
VGS= ±16V, VDS=0V
Forward Transfer Admittance
VGS(off)
yfs
VDS=10V, ID=1mA
VDS=20V, ID=1A
Static Drain-to-Source On-State Resistance
RDS(on)
Ratings
min
typ
Unit
max
1500
V
100
±10
2.5
ID=1A, VGS=10V
0.7
3.5
1.4
10
Marking : K3746
µA
µA
V
S
13
Ω
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
62005QB MS IM TB-00001345 No.8283-1/4
