4 Mbit SPI Serial Flash
SST25VF040
SST25VF020 / 0402Mb / 4Mb Serial Peripheral Interface (SPI) flash memory
EOL Product Data Sheet
FEATURES:
• Single 2.7-3.6V Read and Write Operations
• Serial Interface Architecture
– SPI Compatible: Mode 0 and Mode 3
• 20 MHz Max Clock Frequency
• Superior Reliability
– Endurance: 100,000 Cycles (typical)
– Greater than 100 years Data Retention
• Low Power Consumption:
– Active Read Current: 7 mA (typical)
– Standby Current: 8 µA (typical)
• Flexible Erase Capability
– Uniform 4 KByte sectors
– Uniform 32 KByte overlay blocks
• Fast Erase and Byte-Program:
– Chip-Erase Time: 70 ms (typical)
– Sector- or Block-Erase Time: 18 ms (typical)
– Byte-Program Time: 14 µs (typical)
• Auto Address Increment (AAI) Programming
– Decrease total chip programming time over
Byte-Program operations
• End-of-Write Detection
– Software Status
• Hold Pin (HOLD#)
– Suspends a serial sequence to the memory
without deselecting the device
• Write Protection (WP#)
– Enables/Disables the Lock-Down function of the
status register
• Software Write Protection
– Write protection through Block-Protection bits in
status register
• Temperature Range
– Commercial: 0°C to +70°C
– Industrial: -40°C to +85°C
– Extended: -20°C to +85°C
• Packages Available
– 8-lead SOIC 200 mil body width
– 8-contact WSON (5mm x 6mm)
• All non-Pb (lead-free) devices are RoHS compliant
PRODUCT DESCRIPTION
The SST serial flash family features a four-wire, SPIcompatible interface that allows for a low pin-count package occupying less board space and ultimately lowering
total system costs. SST25VF040 SPI serial flash memories are manufactured with SST proprietary, high performance CMOS SuperFlash Technology. The split-gate
cell design and thick-oxide tunneling injector attain better
reliability and manufacturability compared with alternate
approaches.
The SST25VF040 device significantly improves performance, while lowering power consumption. The total
energy consumed is a function of the applied voltage, cur-
©2006 Silicon Storage Technology, Inc.
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rent, and time of application. Since for any given voltage
range, the SuperFlash technology uses less current to
program and has a shorter erase time, the total energy
consumed during any Erase or Program operation is less
than alternative flash memory technologies. The
SST25VF040 device operates with a single 2.7-3.6V
power supply.
The SST25VF040 device is offered in an 8-lead SOIC 200
mil body width (S2A) package and in an 8-contact WSON
package. See Figure 2 for the pin assignments.
The SST logo and SuperFlash are registered Trademarks of Silicon Storage Technology, Inc.
These specifications are subject to change without notice.
