Transmissive Photosensors (Photo lnterrupters)
CNZ1111 (ON1111), CNZ1112 (ON1112)
Photo lnterrupters
CNZ1111
Unit: mm
For contactless SW, object detection
0.45±0.1
■ Overview
M
Di ain
sc te
on na
tin nc
ue e/
d
Mark for indicating
LED side
A'
V
50
mA
PD
75
mW
Output (Photo Collector-emitter voltage
transistor)
(Base open)
VCEO
30
V
Emitter-collector voltage
(Base open)
VECO
5
V
0.45±0.1
Power dissipation *1
Mark for indicating
LED side
13.0±0.3
5.0±0.2
A
mA
PC
100
mW
Operating ambient temperature
T opr
−25 to +85
°C
Storage temperature
Tstg
−30 to +100
°C
an
20
Collector power dissipation *2
Temperature
IC
2
6.0 min.
Device
center
2-0.45±0.2
(10.0)
1
0.45±0.1
2-R0.5
(2.54)
SEC. A-A'
4
6.2±0.2
ce
/D
isc
on
tin
ue
A'
Collector current
2.0±0.2
IF
Unit: mm
2.2±0.2
emitting diode) Forward current
3
1: Cathode
2: Anode
3: Emitter
4: Collector
PISTR104-010 Package
Unit
3
Input (Light
10.0±0.2
Rating
VR
2-φ3.2±0.2
CNZ1112
2.5±0.2
Symbol
SEC. A-A'
4
2
■ Absolute Maximum Ratings Ta = 25°C
Reverse voltage
(2.54)
6.2±0.2
• Highly precise position detection : 0.3 mm
• Wide gap between emitting and detecting elements, suitable for
thick plate detection
• Fast response : tr , tf = 6 µs (typ.)
• Small output current variation against change in temperature
2-0.45±0.2
19.0±0.2
1
Parameter
0.45±0.1
Device
center
(10.0)
6.0 min.
■ Features
2.0±0.2
2.5±0.2
10.0±0.2
13.0±0.3
5.0±0.2
A
2.2±0.2
25.0±0.35
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CNZ1111 and CNZ1112 are a photocoupler in which a high
efficiency GaAs infrared light emitting diode is used as the light
emitting element, and a high sensitivity phototransistor is used as the
light detecting element. The two elements are arranged so as to face
each other, and objects passing between them are detected.
3
1: Cathode
2: Anode
3: Emitter
4: Collector
PISTR104-013 Package
Ma
int
en
Note) *1: Input power derating ratio is 1.0 mW/°C at Ta ≥ 25°C.
*2: Output power derating ratio is 1.34 mW/°C at Ta ≥ 25°C.
Note) The part numbers in the parenthesis show conventional part number.
Publication date: April 2004
SHG00031BED
1
