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TLP747GF

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仕様・特性

TLP747GF TOSHIBA Photocoupler GaAs Ired & Photo−Thyristor TLP747GF Unit in mm Office Machine Switching Power Supply The TOSHIBA TLP747GF consists of a photo−thyristor optically coupled to a gallium arsenide infrared emitting diode in a six lead plastic DIP. All parameters are tested to the specification of TLP747G. (both condition and limits) • Peak off−state voltage: 400V min. • Trigger LED current: 15mA max. • On−state current: 150mA max. • UL recognized: UL1577, file no. E67349 • BSI approved: BS EN60065: 2002 Certificate no. 7364 BS EN60950-1: 2002 Certificate no. 7365 • SEMCO approved:EN60065,EN60950-1,EN60335-1 • Certificate no.302586 Isolation voltage: 4000Vrms min. • Option (D4) type TOSHIBA 11−7A802 Weight: 0.42 g VDE approved: DIN EN 60747-5-2, Certificate no.40009373 Maximum operating insulation voltage: 890, 1130VPK Highest permissible over voltage: 6000, 8000VPK (Note) When an EN 60747-5-2 approved type is needed, please designate the “ Option (D4) ” • Pin Configuration (top view) Creepage distance: 8.0mm (min.) 1 6 Clearance: 8.0mm (min.) 2 5 3 4 Internal creepage path: 4.0mm (min.) Insulation thickness: 0.5mm (min.) • Conforming safety standards: DIN 57 804. VDE0804 / 1.83 DIN IEC65 / VDE0860 / 8.81 DIN IEC380 / VDE0806 / 8.81 DIN IEC435 / VDE0805 / draft nov. 84 DIN IEC601T1 / VDE0750T1 / 5.82 1 : ANODE 2 : CATHODE 3 : NC 4 : CATHODE 5 : ANODE 6 : GATE BS7002: 1989 (EN60950) 1 2007-10-01

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