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KED502H-A
GaAs Infrared LED KED502K KED503K KED502K K2 Transparent epoxy resin • Transparent epoxy lens ø4.2 2.5 • High power • Broad directivity 26.5 • Direct modulation 3.0±0.3 Features ø0.45 Applications • Optical switches 2.54 Reflector installed ø5.7 max • Optical encoders • Optical instruments 2 1 • Smoke sensors 45˚ 1 Maximum ratings TO-18 1 1 Anode 2 Cathode (Units: mm) KED503K Value Forward Current IF 100 IFP 2.0 ø4.2 mA Peak Forward Current Transparent epoxy resin Units A (Pulse width=100s,Duty ratio=0.1%) VR Reverse Voltage 6 13.5 Symbol 2.0 Item K1 3.0±0.3 • Photo-isolators ø0.45 V 2.54 ø5.7 max PD Power Dissipation 180 mW 1 Operating Temperature T op -25 ~ +100 °C 45˚ Storage Temperature Tstg -30 ~ +100 1 1 Anode 2 Cathode °C Characteristics ( Ta = 2 5 °C unless otherwise noted.) Parameter Symbol Forward Voltage Typ. Max. Units 1.2 1.5 V IF =50 mA 10 VF Reverse Current Min. µA VR=6V mW IF=50mA IR 4.8 12.0 4.0 10.0 Test Conditions 502K 503K PO Peak Emission Wavelength lP 950 nm IF=50mA Spectral Bandwidth at 50% Dl 45 nm IF=50mA Capacitance C 50 pF V = 0, f = 1MHz Optical Output Power 2 Kyosemi Corporation 1 TO-18 (Units: mm)
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