SEMICONDUCTOR
BF420
TECHNICAL DATA
SILICON NPN TRIPLE DIFFUSED TYPE
HIGH VOLTAGE SWITCHING AND AMPLIFIER APPLICATION.
COLOR TV CHROMA OUTPUT APPLICATIONS.
B
C
FEATURES
A
High Voltage : VCEO>300V
Complementary to BF421.
N
E
K
G
J
D
MAXIMUM RATING (Ta=25
)
UNIT
Collector-Base Voltage
VCBO
300
V
Collector-Emitter Voltage
VCEO
300
V
Emitter-Base Voltage
VEBO
5
V
IC
50
ICP
100
Collector Power Dissipation
PC
625
mW
Base Current
IB
50
mA
Junction Temperature
Tj
150
Tstg
-65 150
DC
Collector Current
Peak
Storage Temperature Range
F
1
2
3
1. EMITTER
2. COLLECTOR
3. BASE
mA
ELECTRICAL CHARACTERISTICS (Ta=25
CHARACTERISTIC
H
F
C
RATING
MILLIMETERS
4.70 MAX
4.80 MAX
3.70 MAX
0.45
1.00
1.27
0.85
0.45
_
14.00 + 0.50
0.55 MAX
2.30
0.45 MAX
1.00
M
SYMBOL
L
CHARACTERISTIC
DIM
A
B
C
D
E
F
G
H
J
K
L
M
N
TO-92
)
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
VCB=200V, IE=0
-
-
10
nA
VCB=200V, IE=0, Tj=150
-
-
10
A
-
-
50
nA
ICBO
Collector Cut-off Current
Emitter Cut-off Current
IEBO
VEB=5V, IC=0
DC Current Gain
hFE
VCE=20V, IC=25mA
50
-
-
-
VCE(sat)
IC=30mA, IB=5mA
-
-
0.6
V
Base-Emitter Voltage
VBE
VCE=20V, IC=25mA
-
0.75
-
V
Transition Frequency
fT
VCE=10V, IC=10mA
60
-
-
MHz
Reverse Transfer Capacitance
Cre
VCB=30V, IE=0, f=1MHz
-
-
1.6
pF
Collector-Emitter Saturation Voltage
1998. 10. 31
Revision No : 2
1/3