NPN SILICON PLANAR
HIGH SPEED SWITCHING TRANSISTOR
ZTX360
ISSUE 2 MARCH 94
FEATURES
* 40 Volt VCEO
* 1 Amp continuous current
* Fast switching
C
B
E
E-Line
TO92 Compatible
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
VCBO
60
V
Collector-Emitter Voltage
VCEO
40
V
Emitter-Base Voltage
VEBO
5
V
Continuous Collector Current
IC
1
A
Power Dissipation at Tamb=25°C
Ptot
500
W
Operating and Storage Temperature Range
Tj:Tstg
-55 to +175
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT
CONDITIONS.
Collector-Emitter
Sustaining Voltage
VCEO(SUS)
40
V
IC=10mA, IB=0*
Collector Cut-Off
Current
ICBO
500
300
µA
nA
VCB=40V, IE=0
VCB=40V, IE=0, Tamb=150°C
Collector-Emitter
Saturation Voltage
VCE(sat)
0.6
V
IC=500mA, IB=50mA*
Base-Emitter
Saturation Voltage
VBE(sat)
0.7
1.2
V
IC=500mA, IB=50mA*
Static Forward Current
Transfer Ratio
hFE
25
150
Transition Frequency
fT
200
Input Capacitance
Cib
36
Output Capacitance
Cob
5.75
Turn-On Time
Turn-Off Time
IC=500mA, VCE=1V*
MHz
IC=50mA, VCE=10V,
f=100MHz
50
pF
VEB=0.5V, IC=0, f=1MHz
10
pF
VCB=10V, IE=0, f=1MHz
ton
40
ns
VCC=30V, IC=500mA,
=50mA, -VBE(off)
=2V
IB(on)
toff
75
ns
VCC=30V, IC=500mA,
=-I
=50mA
IB(on) B(off)
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
3-166
